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We describe the growth, material characterization, and lasing of InP/GaInP quantum dot (QD) microdisks (diameter D = 2.2 μ m, quality factor Q ∼ 9000) with an emission lasing line of 693 nm (77 K). We demonstrate that MOVPE growth can result in two types of InP/GaInP QDs, differing in height (type A h ∼ 5 –10 nm, type B h ∼ 20 nm), whose emission has different decay lifetimes (τ A = 0.6 ns, τ B = 2.4 ns). We show, importantly for technological microlasing applications, that lasing occurs via the excited states of type A QDs, as inferred from a number of experimental results: power-dependent photoluminescence, time-resolved experiments, and temperature dependence of the generation threshold. [ABSTRACT FROM AUTHOR]

Experiments on the growth of self-assembled InP/GaInP2 quantum dots in dielectric mask 0.1–1 μm apertures by MOVPE epitaxy have been carried out. A sequence of operations for the implementation of the lift-off lithography method is proposed and implemented. The possibility of obtaining apertures with 100 nm diameter and less is shown. Combination of thermally deposited SiO2 and wet etching is shown to produce minimal amount of nonradiative defects and results in a stable PL signal from single QDs in the aperture. [ABSTRACT FROM AUTHOR]

The effect of lattice relaxation instability (martensitic transition) on piezoelectric fields (EPE) in spontaneously ordered GaInP2/GaAs epitaxial layers was demonstrated using scanning Kelvin probe microscopy in combination with electron microscopy and optical spectroscopy measurements. The transition manifests itself in the dependence of the surface potential of the epi-layer on the mechanical (cleavage) and thermal (annealing) impacts. This is associated with a switching of the crystal lattice between relaxed and strained martensitic states, corresponding to a change in EPE in the epi-layer. The measured surface potential values (0.2–2.4 V) correspond to EPE within ±100 kV/cm and a strong decrease in |EPE| with increasing layer thickness, indicating the pinning of the Fermi level and piezoelectric doping. Our results open up the prospects for using spontaneously ordered semiconductor alloys to control electronic states in semiconductor nanostructures by controlling their piezoelectric fields. [ABSTRACT FROM AUTHOR]

We report non-contact local doping of a monolayer WSe2 transferred onto a piezoelectric substrate having surface potential wells (SPWs) induced by structural inhomogeneities. We used epitaxial GaN and InP/GaInP2 structures, in which there are SPWs ∼0.2 V deep and 0.1–2 μm in size. Using surface topography and potential scanning probe microscopy, as well as optical reflectance, photoluminescence, and Raman spectroscopy measurements, we observed strong enhancement of charged exciton emission and Raman intensity in the SPW regions of the monolayer WSe2, which indicate on piezoelectric doping at a level n ≥ 1012 cm−2 on a length scale ∼0.2–1 μm. Our results can be used to create electron/hole quantum puddles with anyon states in transition metal dichalcogenides, promising for the development of room temperature and magnetic-field-free fault-tolerant topological quantum computing. [ABSTRACT FROM AUTHOR]

In magneto-photoluminescence (magneto-PL) spectra of quasi two-dimensional islands (quantum dots) having seven electrons and Wigner–Seitz radius rs~1.5, we revealed a suppression of magnetic field (B) dispersion, paramagnetic shifts, and jumps of the energy of the emission components for filling factors ν > 1 (B < 10 T). Additionally, we observed B-hysteresis of the jumps and a dependence of all these anomalous features on rs. Using a theoretical description of the magneto-PL spectra and an analysis of the electronic structure of these dots based on the single-particle Fock–Darwin spectrum and many-particle configuration-interaction calculations, we show that these observations can be described by the rs-dependent formation of the anyon (magneto-electron) composites (ACs) involving single-particle states having non-zero angular momentum and that the anyon states observed involve Majorana modes (MMs), including zero-B modes having an equal number of vortexes and anti-vortexes, which can be considered as Majorana anyons. We show that the paramagnetic shift corresponds to a destruction of the equilibrium self-formed ν~5/2 AC by the external magnetic field and that the jumps and their hysteresis can be described in terms of Majorana qubit states controlled by B and rs. Our results show a critical role of quantum confinement in the formation of magneto-electrons and implies the liquid-crystal nature of fractional quantum Hall effect states, the Majorana anyon origin of the states having even ν, i.e., composite fermions, which provide new opportunities for topological quantum computing. [ABSTRACT FROM AUTHOR]

We used the measurements of the photo-luminescence spectra vs photon pumping and Coulomb blockade charge tuning together with Kelvin probe microscopy to study piezo-electric fields in self-organized InP/GaInP2 quantum dots (QDs) having a strong Wigner localization regime. These exciton/electron state-filling measurements together with the surface potential imaging and the band structure calculations demonstrate a piezo-electric doping and type-I optical transitions induced in these dots by an atomic ordering (AO) of GaInP2. Our results clarify a critical role of AO in the formation of natural Wigner and anyon molecules and represent an important step for realization of the topological quantum gates using these QDs. [ABSTRACT FROM AUTHOR]

We used transmission electron microscopy, Raman, and photoluminescence spectroscopy to identify the effect of CuPt-type GaP-InP atomic ordering (AO) on the structural and emission properties of self-organized (SO) InP/GaInP2 Wigner molecule (WM) quantum dot (QD) structures. We found that the correlation of AO and SO growth results in the formation of InP/GaInP2 QD/AO-domain (QD/AOD) core-shell composites. This observation shows that intrinsic WMs in this system emerge due to a strong piezoelectric field generated by AODs, which induces QD doping and a built-in magnetic field. We found that the bond relaxation of AODs leads to a decrease in the emission energy of WMs of 80 meV. The photoluminescence spectra of single WMs having an emission energy ∼1.53 eV are presented here, the lowest one reported for this system. [ABSTRACT FROM AUTHOR]

Quantum dots (QDs) formed on GaAs(100) substrates by InAs deposition followed by (Al,Ga)As or (In,Ga,Al)As overgrowth demonstrate a photoluminescence (PL) peak that is redshifted (up to 1.3 μm) compared to PL emission of GaAs-covered QDs. The result is attributed to redistribution of InAs molecules in the system in favor of the QDs, stimulated by Al atoms in the cap layer. The deposition of a 1 nm thick AlAs cover layer on top of the InAs-GaAs QDs results in replacement of InAs molecules of the wetting layer by AlAs molecules, leading to a significant increase in the heights of the InAs QDs, as follows from transmission electron microscopy. This effect is directly confirmed by transmission electron microscopy indicating a transition to a Volmer-Weber-like QD arrangement. We demonstrate an injection laser based on this kind of QDs. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Formation, emission, and lasing properties of strain-free InP(As)/AlInAs quantum dots (QDs) embedded in AlInAs microdisk (MD) cavity were investigated using transmission electron microscopy and photoluminescence (PL) techniques. In MD structures, the QDs have the nano-pan-cake shape with the height of ~2 nm, the lateral size of 20-50 nm, and the density of ~5×109 cm-2. Their emission observed at ~940 nm revealed strong temperature quenching, which points to exciton decomposition. It also showed unexpected type-I character, indicating In-As intermixing as confirmed by band structure calculations. We observed lasing of InP(As) QD excitons into whispering gallery modes in MD having the diameter of ~3.2 lm and providing a free spectral range of ~27 nm and quality factors up to Q~13 000. Threshold of ~50 W/cm2 and spontaneous emission coupling coefficient of ~0.2 were measured for this MD-QD system. [ABSTRACT FROM AUTHOR]

A technique of cantilever based scanning near-field optical microscopy is applied. Using InP/GaInP quantum dots structures, 100nm (λ/7) spatial resolution of the technique in illumination-collection regime is tested. The possibility to obtain optical data with a subdiffraction resolution is exploited for clarifying the transversal electric field mode configuration of the radiating semiconductor laser. [ABSTRACT FROM PUBLISHER]

The CdTe quantum dots (QDs) grown on a ZnTe epilayer deposited directly on a GaSb substrate are studied by transmission electron microscopy (TEM) and near-field scanning optical microscopy. High resolution TEM images show CdTe QD of planoconvex shape. Near-field photoluminescence (NPL) in an applied magnetic field is used to measure the Zeeman splitting and diamagnetic shift of single CdTe QDs. Finally, time resolved NPL measurements suggest that the higher energy lines in the CdTe QD NPL spectra correspond to exciton transitions occurring in larger CdTe QDs and have shorter exciton lifetimes. [ABSTRACT FROM AUTHOR]

In this work, 10 and 20 nm diameter colloidal CdSe nanowires (NWs) have been successfully incorporated into ZnSe layers grown by molecular beam epitaxy on GaAs substrates. Atomic force microscopy and scanning electron microscopy were carried out to study the surface morphology of the samples. Transmission electron microscopy and energy-dispersive x-ray analysis were also carried out to study the chemical composition and lattice structure around the embedded CdSe NWs. Finally, single NW photoluminescence (PL) spectroscopy and PL imaging were used to study the optical properties of ZnSe films containing CdSe NWs. The experimental results confirm the presence of embedded CdSe NWs in the ZnSe films and show that the embedded NWs remain optically active [ABSTRACT FROM AUTHOR]

InGaN quantum dot (QD) formation in a wide pressure range MOCVD reactor was studied. The existence of QDs and their lateral size (2–5 nm) were demonstrated using transmission electron microscopy and high spatial resolution (~ 100 nm) near-field magneto-photoluminescence spectroscopy. We found that an increase of the reactor pressure from 400 to 1000 mbar leads to an order of magnitude increase in light emission efficiency of the InGaN/GaN QDs accompanied by ~ 100 meV redshift of the emission wavelength. We explored stimulated phase separation (SPS) to control carrier localization and emission wavelength. The SPS was achieved by adding In in the matrix material. This leads to formation of extremely deep InGaN/InGaN QDs having energy localization up to ~ 0.8 eV, which was revealed from selectively excited far-field photoluminescence (PL) spectra. Without SPS the QD activation energy is found to be below 0.2 eV. A nonequilibrium carrier population strongly suppresses the temperature-induced shift of the PL emission in deep InGaN QDs. [ABSTRACT FROM AUTHOR]

The article reports that exciton localisation in InGaAsN and GaAsSbN observed by near-field magnetoluminescence and scanning optical microscopy (NSOM). Dilute nitride alloys have recently attracted considerable attention as promising materials for laser diodes in the 1.3-1.5 mm range, as well as for more efficient solar cells. The article focuses on use of low-temperature NMPL, at fields up to 10 T, to study these fluctuations in detail. Researchers also employ near-field scanning optical microscopy (NSOM) to study the lateral distribution of such QD-like compositional fluctuations by imaging their individual sharp emission lines.

We have investigated the influence of Si–N complexes on the electronic properties of GaAsN alloys. The presence of Si–N complexes is suggested by a decrease in carrier concentration, n, with increasing N-composition, observed in GaAsN:Si films but not in modulation-doped heterostructures. In addition, for GaAsN:Te (GaAsN:Si), n increases substantially (minimally) with annealing-T, suggesting a competition between annealing-induced Si–N complex formation and a reduced concentration of N-related traps. Since Si–N complex formation is enhanced for GaAsN:Si growth with the (2×4) reconstruction, which has limited group V sites for As–N exchange, the (Si–N)As interstitial pair is identified as the dominant Si–N complex. [ABSTRACT FROM AUTHOR]