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Exciton localisation in InGaAsN and GaAsSbN observed by near-field magnetoluminescence and scanning optical microscopy (NSOM).
- Source :
-
IEE Proceedings -- Optoelectronics . Oct2004, Vol. 151 Issue 5, p346-351. 6p. - Publication Year :
- 2004
-
Abstract
- The article reports that exciton localisation in InGaAsN and GaAsSbN observed by near-field magnetoluminescence and scanning optical microscopy (NSOM). Dilute nitride alloys have recently attracted considerable attention as promising materials for laser diodes in the 1.3-1.5 mm range, as well as for more efficient solar cells. The article focuses on use of low-temperature NMPL, at fields up to 10 T, to study these fluctuations in detail. Researchers also employ near-field scanning optical microscopy (NSOM) to study the lateral distribution of such QD-like compositional fluctuations by imaging their individual sharp emission lines.
- Subjects :
- *EXCITON theory
*MICROSCOPY
*ALLOYS
*NITRIDES
*LASERS
*PHOTOVOLTAIC cells
*OPTICS
Subjects
Details
- Language :
- English
- ISSN :
- 13502433
- Volume :
- 151
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- IEE Proceedings -- Optoelectronics
- Publication Type :
- Academic Journal
- Accession number :
- 15287741
- Full Text :
- https://doi.org/10.1049/ip-opt:20040881