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Exciton localisation in InGaAsN and GaAsSbN observed by near-field magnetoluminescence and scanning optical microscopy (NSOM).

Authors :
Merz, J. L.
Mintairov, A. M.
Kosel, T.
Sun, K.
Source :
IEE Proceedings -- Optoelectronics. Oct2004, Vol. 151 Issue 5, p346-351. 6p.
Publication Year :
2004

Abstract

The article reports that exciton localisation in InGaAsN and GaAsSbN observed by near-field magnetoluminescence and scanning optical microscopy (NSOM). Dilute nitride alloys have recently attracted considerable attention as promising materials for laser diodes in the 1.3-1.5 mm range, as well as for more efficient solar cells. The article focuses on use of low-temperature NMPL, at fields up to 10 T, to study these fluctuations in detail. Researchers also employ near-field scanning optical microscopy (NSOM) to study the lateral distribution of such QD-like compositional fluctuations by imaging their individual sharp emission lines.

Details

Language :
English
ISSN :
13502433
Volume :
151
Issue :
5
Database :
Academic Search Index
Journal :
IEE Proceedings -- Optoelectronics
Publication Type :
Academic Journal
Accession number :
15287741
Full Text :
https://doi.org/10.1049/ip-opt:20040881