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In this study, we combined x-ray topography (XRT) and birefringence imaging to identify the Burgers vectors in threading mixed dislocations (TMDs) in SiC. XRT was utilized to determine the screw components of the Burgers vectors, while the edge components were ascertained using birefringence images obtained by polarized light microscopy. Our analysis, validated against transmission electron microscopy and large-angle convergent beam electron diffraction, provides a novel, nondestructive approach for examining defects in SiC power devices. The results demonstrate a significant advancement in the characterization of TMDs, contributing insights into enhancing the quality and reliability of semiconductor devices. This research paves the way for future developments in SiC technology, highlighting the importance of a detailed dislocation analysis in the field of semiconductor materials.

For the nondestructive characterization of SiC wafers for power device application, birefringence imaging is one of the promising methods. In the present study, it is demonstrated that birefringence image contrast variation in off-axis SiC wafers corresponds to the in-plane shear stress under conditions slightly deviating from crossed Nicols according to both theoretical consideration and experimental observation. The current results indicate that the characterization of defects in SiC wafers is possible to achieve by birefringence imaging. [ABSTRACT FROM AUTHOR]