Characterization of V-Shaped Defects Formed during the 4H-SiC Solution Growth by Transmission Electron Microscopy and X-ray Topography Analysis.

Details

Language :

English

ISSN :

15287483

Volume :

16

Issue :

9

Database :

Supplemental Index

Journal :

Crystal Growth & Design

Publication Type :

Academic Journal

Accession number :

118033873

Full Text :

https://doi.org/10.1021/acs.cgd.6b00711