328 results on '"Honda, Yoshio"'
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2. Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers.
3. Impacts of off-angle and off-direction on surface morphology of GaN grown by metalorganic vapor phase epitaxy on (0001) GaN substrate
4. Sn-doped n-type GaN layer with high electron density of 1020 cm−3 grown by halide vapor phase epitaxy
5. Optical activation of praseodymium ions implanted in gallium nitride after ultra-high pressure annealing
6. Anisotropic hole transport along [0001] and [112¯0] direction in p-doped (101¯0) GaN.
7. Surface kinetics in halide vapor phase epitaxial growth of GaN layers on GaN (0001) freestanding substrates
8. Author Correction: Laser slice thinning of GaN-on-GaN high electron mobility transistors
9. Laser slice thinning of GaN-on-GaN high electron mobility transistors
10. Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars
11. Cyclotron production of 225Ac from an electroplated 226Ra target
12. Electrical properties and structural defects of p-type GaN layers grown by halide vapor phase epitaxy
13. Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures
14. Lattice bow in thick, homoepitaxial GaN layers for vertical power devices
15. Optimization of InGaN thickness for high-quantum-efficiency Cs/O-activated InGaN photocathode
16. Tuning the p-type doping of GaN over three orders of magnitude via efficient Mg doping during halide vapor phase epitaxy.
17. Gallium nitride wafer slicing by a sub-nanosecond laser: effect of pulse energy and laser shot spacing
18. Ammonia decomposition and reaction by high-resolution mass spectrometry for group III – Nitride epitaxial growth
19. Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE
20. Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy
21. Morphological study of InGaN on GaN substrate by supersaturation
22. How to obtain metal-polar untwinned high-quality (1 0 −1 3) GaN on m-plane sapphire
23. The effect of dry etching condition on the performance of blue micro light-emitting diodes with reduced quantum confined Stark effect epitaxial layer.
24. High-temperature thermal annealing of nonpolar (1 0 [formula omitted] 0) AlN layers sputtered on (1 0 [formula omitted] 0) sapphire
25. Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy
26. A-plane GaN growth on (11-20) 4H-SiC substrate with an ultrathin interlayer
27. Effect of V/III ratio on the surface morphology and electrical properties of m–plane ([formula omitted]) GaN homoepitaxial layers
28. Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si(001) with a directionally sputtered AlN buffer layer
29. Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties
30. Electron lifetime and diffusion coefficient in dopant-free p-type distributed polarization doped AlGaN.
31. Effective neutron detection using vertical-type BGaN diodes.
32. Discrete AlN mole fraction of n/12 (n = 4–8) in Ga-rich zones functioning as electron pathways created in nonflat AlGaN layers grown on high-miscut sapphire substrates.
33. Investigation of Electrical Properties of N‐Polar AlGaN/AlN Heterostructure Field‐Effect Transistors.
34. Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region
35. Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode
36. Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based deep-ultraviolet LEDs grown on AlN templates with dense macrosteps using cathodoluminescence spectroscopy.
37. Hole mobility limiting factors in dopant-free p-type distributed polarization-doped AlGaN.
38. Lateral p-type GaN Schottky barrier diode with annealed Mg ohmic contact layer demonstrating ideal current–voltage characteristic.
39. Characteristics of a-plane GaN films grown on optimized silicon-dioxide-patterned r-plane sapphire substrates
40. Temperature Field, Flow Field, and Temporal Fluctuations Thereof in Ammonothermal Growth of Bulk GaN—Transition from Dissolution Stage to Growth Stage Conditions.
41. A Review on the Progress of AlGaN Tunnel Homojunction Deep-Ultraviolet Light-Emitting Diodes.
42. GaN/SiC Epitaxial Growth for High Power and High Switching Speed Device Applications
43. Optical properties of neodymium ions in nanoscale regions of gallium nitride
44. Optical properties of (1 1¯ 0 1) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates
45. Scanning electron microscope imaging by selective e-beaming using photoelectron beams from semiconductor photocathodes.
46. Local stress control to suppress dislocation generation for pseudomorphically grown AlGaN UV-C laser diodes.
47. High In content nitride sub-micrometer platelet arrays for long wavelength optical applications.
48. Maskless selective growth of semi-polar (1 12¯ 2) GaN on Si (3 1 1) substrate by metal organic vapor phase epitaxy
49. Growth and properties of semi-polar GaN on a patterned silicon substrate
50. High-Energy Computed Tomography as a Prospective Tool for In Situ Monitoring of Mass Transfer Processes inside High-Pressure Reactors—A Case Study on Ammonothermal Bulk Crystal Growth of Nitrides including GaN.
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