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Hole mobility limiting factors in dopant-free p-type distributed polarization-doped AlGaN.
- Source :
- Applied Physics Letters; 6/19/2023, Vol. 122 Issue 25, p1-6, 6p
- Publication Year :
- 2023
-
Abstract
- We investigated the hole mobility limiting factors in dopant-free p-type distributed polarization-doped (DPD) AlGaN layers by an experimental method. p-DPD AlGaN exhibited a higher hole mobility than GaN:Mg with a similar room temperature hole concentration across all temperature ranges owing to the absence of ionized impurity scattering. In addition, unlike in n-DPD AlGaN, alloy scattering was not always critical in p-DPD AlGaN. The extracted alloy scattering potential was only 0.3 eV, which resulted in a reduced effect of alloy scattering and originated from a small valence band offset in the GaN/AlN heterojunction system. The results suggest that DPD principally enables the fabrication of low-resistance p-type nitride semiconductor thin films as a result of the high hole concentration and high hole mobility. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 122
- Issue :
- 25
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 164486140
- Full Text :
- https://doi.org/10.1063/5.0155363