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Gallium nitride (GaN) has attracted great attention as a structural material for advanced microelectromechanical systems (MEMS), thanks to its excellent ensemble of electrical and mechanical properties. Here, we report on studying the effects of ion radiation-induced displacement damage on resonant MEMS made of GaN film grown on aluminum nitride (AlN) buffer layer. We design and fabricate GaN/AlN heterostructure doubly-clamped microstring resonators with length $L \,\, =100$ , 200, 300, 400, 500, 600, and 700 $\mu \text{m}$ , and irradiate the devices with 440-keV Ar $^{+}$ ions, to probe the effects of ion radiation-induced displacement damage on the resonance behavior. The ion energy and range have been selected so that the ions would stop within the GaN layer, thus allowing diagnostics to show the effects of damage in the structure. The multimode resonance frequencies of the devices decrease significantly ($\vert \Delta f\vert /f >50$ %) with the increase of fluence beyond 1014 cm−2. According to scanning electron microscopy (SEM) imaging, the irradiated GaN/AlN resonators are visibly deformed at high fluence, where the amount of curvature increases monotonically with the fluence. The deformation of the structures can be ascribed to the change in both Young’s modulus and built-in stress resulting from ion radiation-induced displacement damage. The results extend the understanding of radiation-induced damage mechanisms in resonant MEMS. [ABSTRACT FROM AUTHOR]

Lighter doping, pretreatment (exposure to hydrogen in a steam bath), and lower dose rate are each found to exacerbate 10-keV X-ray-induced negative frequency shifts and increase in resistivity measured in T-shaped, asymmetric, piezoresistive, micromachined, and resonating cantilevers. All devices recover to levels close to preirradiation after several hours of postirradiation annealing. The effects are attributed to dose-rate-dependent efficiencies of the depassivation of dopants by hydrogen and surface charging effects, which alter the effective Young’s modulus and shear elastic constants. Increases in resistivity are attributed to increases in scattering causing decreases in mobility. Results indicate the need to consider dopant type and concentration when choosing microelectromechanical systems for use in radiation environments in addition to accounting for low-dose-rate effects. [ABSTRACT FROM AUTHOR]

Total-ionizing-dose-induced resonance frequency shifts in piezoresistive micromachined cantilevers are experimentally shown to be dose-rate dependent. Devices were irradiated to 1 Mrad(SiO2) at rates from 5.4 to 30.3 krad(SiO2)/min, with lower rate exposures producing up to four-times more negative frequency shifts than higher rate exposures. Devices that were hydrogenated in a steam bath for 1 h showed shifts similar to those of control (not hydrogenated) devices at higher dose rates, and larger shifts than control devices at lower rates. All devices recovered to levels close to preirradiation after several hours of post-irradiation annealing. The dose-rate dependence is attributed to differences in carrier concentration caused by varying efficiencies of the depassivation of boron by hydrogen at higher and lower dose rates and/or surface charging effects, and the subsequent differences in Young’s modulus that occur as a result. Many of these processes are similar to effects that lead to ELDRS in linear bipolar transistors, emphasizing the need to include low-dose-rate testing of microelectromechanical systems devices when considering them for use in space systems. [ABSTRACT FROM PUBLISHER]

The response of silicon-based microelectromechanical systems resonators to proton irradiation is determined by the combined effects of displacement damage and total ionizing dose (TID). Displacement damage (DD) can lead to carrier removal, which tends to decrease the carrier concentration, and TID leads to dopant activation and/or surface charging effects, which tend to increase the carrier concentration. These competing effects lead to changes in carrier concentration that alter Young’s modulus, and consequently the resonance frequency. For higher flux 2-MeV proton irradiation to 1014/cm2, TID effects dominate at low fluence, leading to a decrease in resonance frequency, which is offset by displacement damage effects at higher fluence. Fast recovery is observed as TID effects anneal out and DD effects remain. For lower-flux 0.8-MeV proton irradiation to 7 \times 10^12 /cm2, DD effects are relatively more significant than for 2-MeV proton irradiation, and an increase in resonance frequency is observed at all fluences. Stopping and range of ions in matter calculations reinforce these conclusions. [ABSTRACT FROM PUBLISHER]

We evaluate the response of T-shaped, asymmetric, piezoresistive, micromachined cantilevers fabricated on p-type Si to 10-keV X-ray irradiation. The resonant frequency decreases by 25 ppm at 2.1 Mrad(SiO2), and partially recovers during post-irradiation annealing. An explanation of the results is proposed that is based on radiation-induced acceptor depassivation. This occurs because radiation-generated holes release hydrogen from previously passivated acceptors, causing the carrier concentration to increase, especially near the surface. Increased carrier concentration decreases Young’s modulus, resulting in a decrease in the cantilever resonant frequency. Finite element simulations show that the effect of a decreasing Young’s modulus in the surface region is consistent with the measured decrease in resonant frequency in the irradiated devices. [ABSTRACT FROM PUBLISHER]

A boron-doped polycrystalline diamond film was deposited on a molybdenum substrate and resistively heated in a high vacuum environment. The thermally excited emission current as a function of cathode temperature was measured. This phenomenon, known as thermionic emission, is characterized by electron emission arising from a surface at elevated temperatures and is described by the Richardson equation. The observed thermionic emission current from the diamond sample followed the Richardson equation from which a work function of 4.43 eV and a Richardson constant of ∼60 A/cm2K2 were observed. This indicates boron-doped polycrystalline diamond behaves as an interesting thermionic emitter for possible energy conversion and other electron emission applications. [ABSTRACT FROM AUTHOR]

A nanocrystalline-diamond-based monolithic lateraltype vacuum transistor is reported. The device, fabricated by a single-mask approach, incorporates a fingerlike emitter, integrated with gate and anode electrodes, in a lateral triode geometrical configuration. The device demonstrates transistor characteristics with gate-controlled current modulation showing distinct cutoff, linear, and saturation regions. The transistor with a single emitter has a gate turn-on voltage of 40 V, anode current (Iα) of 1.1 μA (current density of ∼1 A/cm[sup2]) with a small gate intercepted current (I[subg]) of less than 0.001%, transconductance of 22 nS/finger, dc voltage gain of 200, and high output impedance of 10 GIL This demonstration of a lateral vacuum transistor at microelectronic scale is essential to the development of the vacuum electronic integrated circuit. [ABSTRACT FROM AUTHOR]

Recent advances in wide-band gap thermionic materials have brought to question the applicability of well accepted theories for thermionic emission from metallic surfaces. The authors developed a nonequilibrium Green's function (NEGF) self-consistent model based on quantum mechanics to investigate thermionic emission from nitrogen-incorporated diamond cathodes. The model allows us to relax several assumptions typical of Richardson's equation. The NEGF method is a self-consistent Schrödinger-Poisson formalism where the transport is calculated from an effective mass description and Fermi-Dirac statistics. The predictions were validated against experimental measurements from nitrogen-incorporated diamond cathodes. The model captures key emission characteristics such as the onset temperature of emission and the emission from low or negative electron-affinity materials. The results indicate that Richardson's equation overestimates emission for many cases, especially in low electron affinity materials. In addition, the model allowed them to estimate the heat flux at the cathode using the spectral emission as opposed to the mean velocity approximation, which under-predicts the cooling potential. Finally, they developed a relation between Richardson's constant, work function, and electron affinity to aid in identifying a range of Richardson's parameters applicable to experimental characterization of materials. [ABSTRACT FROM AUTHOR]

Deaggregation of oxidized ultradispersed diamond (UDD) in dimethylsulfoxide followed by reaction with glycidol monomer, purification via aqueous dialysis, and dispersion in ethylene glycol (EG) base fluid affords nanodiamond (ND)-poly(glycidol) polymer brush:EG nanofluids exhibiting 12% thermal conductivity enhancement at a ND loading of 0.9 vol %. Deaggregation of UDD in the presence of oleic acid/octane followed by dispersion in light mineral oil and evaporative removal of octane gives ND·oleic acid:mineral oil dispersions exhibiting 11% thermal conductivity enhancement at a ND loading of 1.9 vol %. Average particle sizes of ND additives, determined by dynamic light scattering, are, respectively, ca. 11 nm (in H2O) and 18 nm (in toluene). Observed thermal conductivity enhancements outperform enhancement effects calculated using Maxwell's effective medium approximation by 2- to 4-fold. Covalent ND surface modification gives 2-fold greater thermal conductivity enhancement than ND surface modification via hydrogen-bonding interactions at similar concentrations. Stable, static ND:mineral oil dispersions are reported for the first time.