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A method is described for optimizing the coercivity keeping the magnetostriction value constant in electrodeposited CoP multilayers for their applications in magnetoelastic magnetic sensors. The results show a saturation magnetostriction in between the values of the magnetostriction of the two materials and independent of the thickness of the layers.

In this work, we report the magnetic properties of sputtered Permalloy (Py: Ni80Fe20)/molybdenum (Mo) multilayer thin films. We show that it is possible to maintain a low coercivity and a high permeability in thick sputtered Py films when reducing the out-of-plane component of the anisotropy by inserting thin film spacers of a non-magnetic material like Mo. For these kind of multilayers, we have found coercivities which are close to those for single layer films with no out-of-plane anisotropy. The coercivity is also dependent on the number of layers exhibiting a minimum value when each single Py layer has a thickness close to the transition thickness between Neel and Bloch domain walls. [ABSTRACT FROM AUTHOR]

The transition between Kondo and Coulomb blockade effects in discontinuous double magnetic tunnel junctions is explored as a function of the size of the CoPt magnetic clusters embedded between AlOx mnnel barriers. A gradual competition between cotunneling enhancement of the tunneling magnetoresistance (TMR) and the TMR suppression due to the Kondo effect has been found in these junctions, with both effects having been found to coexist even in the same sample. It is possible to tune between these two states with temperature (at a temperature far below the cluster blocking temperature). In addition, when further decreasing the size of the CoPt clusters, another gradual transition between the Kondo effect and direct tunneling between the electrodes takes place. This second transition shows that the spin-flip processes found in junctions with impurities in the barrier are in fact due to the Kondo effect. A simple theoretical model able to account for these experimental results is proposed. [ABSTRACT FROM AUTHOR]

In a previous work [Phys. Rev. B 85, 214408 (2012)], the conductance and the tunneling magnetoresistance in discontinuous high anisotropy magnetic tunnel junctions was experimentally studied. Different conduction regimes (sequential tunneling, co-tunneling, Kondo effect, and direct tunneling) and gradual transitions between them were found as a function of the temperature and the size of the clusters within the barrier. A simple theoretical model was suggested able to account for the experimental results even assuming no dispersion of the distribution of the size of the clusters. Here, we study, within this theoretical framework, the effect of the volume of the clusters within the barrier, and the effect of the thickness of the insulating barrier (or the tunnel resistance), on the transition between Kondo effect and co-tunneling regime. Clarifying the role of both parameters is of importance to understand and experimentally control the transition between the different conduction regimes. [ABSTRACT FROM AUTHOR]

It is common to find a thin (∼0.5 nm) layer of Mg deposited prior to the MgO tunnel barrier in crystalline CoFe(B)/MgO/CoFe(B) magnetic tunnel junctions, due to the improved device performance that results. However, despite their common usage, the reasons why such layers are effective are unclear. We use structures that model the lower electrode of such devices to show that a suitably thick Mg insert layer enhances the crystal quality of both MgO and CoFe(B), permits interfacial oxides to reduce back to a metallic ferromagnetic state, and hence improves magnetic switching of the CoFe(B) electrode, properties which are inextricably linked to device performance. [ABSTRACT FROM AUTHOR]

The current-induced resonance frequencies of domain walls in parabolic pinning potentials are measured in Gd doped NiFe as a function of doping level. The modification of magnetic properties due to Gd doping results in an order of magnitude increase in resonance frequencies for 10% Gd doping, due to the induced out-of-plane anisotropy, and the resonance frequencies are excited at lower current densities compared to undoped NiFe. These results are reproduced using a one-dimensional model of domain wall resonance, and found to be in good agreement in the small oscillation amplitude limit. [ABSTRACT FROM AUTHOR]

We have studied the effect of annealing on the interface magnetization in a CoFeB/MgO structure which models the lower electrode in a magnetic tunnel junction device. We find that MgO deposition causes Fe to diffuse toward the CoFeB/MgO interface, where it preferentially bonds with oxygen to form a Fe-O-rich interfacial region with reduced magnetization. After annealing at 375 °C the compositional inhomogeneity remains; Fe is reduced back to a ferromagnetic metallic state and the full interfacial magnetization is regained. [ABSTRACT FROM AUTHOR]

The magnetic properties of CoP electrodeposited alloys can be easily controlled by layering the alloys and modulating the P content of the different layers by using pulse plating in the electrodeposition process. However, because of its amorphous nature, the study of the interface quality, which is a limitation for the optimization of the soft magnetic properties of these alloys, becomes a complex task. In this work, we use Rutherford backscattering spectroscopy (RBS) to determine that electrodeposited Co0.74P0.26/Co0.83P0.17 amorphous multilayers with layers down to 20 nm-thick are composed by well-defined layers with interfacial roughness below 3 nm. We have also determined, using magnetostriction measurements, that 4 nm is the lower limitation for the layer thickness. Below this thickness, the layers are mixed and the magnetic behavior of the multilayered films is similar to that shown by single layers, thus going from in-plane to out-of-plane magnetic anisotropy. Therefore, these results establish the range in which the magnetic properties of these alloys can be controlled by layering.

The semiconducting p-n junction is a simple device structure with great relevance for electronic and optoelectronic applications. The successful integration of low-dimensional materials in electronic circuits has opened the way forward for producing gate-tunable p-n junctions. In that context, we present here an organic (Cu-phthalocyanine)-2D layered material (MoS2) hybrid p-n junction with both gate-tunable diode characteristics and photovoltaic effect. Our proof-of-principle devices show multifunctional properties with diode rectifying factors of up to 10(4), while under light exposure they exhibit photoresponse with a measured external quantum efficiency of ∼11%. As for their photovoltaic properties, we found open circuit voltages of up to 0.6 V and optical-to-electrical power conversion efficiency of 0.7%. The extended catalogue of known organic semiconductors and two-dimensional materials offer the prospect for tailoring the properties and the performance of the resulting devices, making organic-2D p-n junctions promising candidates for future technological applications.

Hole-doping into the Mott insulator LaMnO3 results in a very rich magneto-electric phase diagram, including colossal magnetoresistance and different types of charge and orbital ordering. On the other hand, LaMnO3 presents an important catalytic activity for oxygen reduction, which is fundamental for increasing the efficiency of solid-oxide fuel cells and other energy-conversion devices. In this work, we report the chemical solution (water-based) synthesis of high-quality epitaxial thin films of LaMnO3, free of defects at square-centimeter scales, and compatible with standard microfabrication techniques. The films show a robust ferromagnetic moment and large magnetoresistance at room temperature. Through a comparison with films grown by pulsed laser deposition, we show that the quasi-equilibrium growth conditions characteristic of this chemical process can be exploited to tune new functionalities of the material.

Chemically engineered interfaces are shown to produce inversions of the magnetoresistance in spintronic devices including lithium fluoride interlayers. This behavior is explained by the formation of anti-ferromagnetic difluoride layers. By changing the order of deposition of the different materials, the sign of the magnetoresistance can be deterministically controlled both in organic spin valves and in inorganic magnetic tunnel junctions., (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

Single electron electronics is now well developed, and allows the manipulation of electrons one-by-one as they tunnel on and off a nanoscale conducting island. In the past decade or so, there have been concerted efforts in several laboratories to construct single electron devices incorporating ferromagnetic components in order to introduce spin functionality. The use of ferromagnetic electrodes with a non-magnetic island can lead to spin accumulation on the island. On the other hand, making the dot also ferromagnetic introduces new physics such as tunnelling magnetoresistance enhancement in the cotunnelling regime and manifestations of the Kondo effect. Such nanoscale islands are also found to have long spin lifetimes. Conventional spintronics makes use of the average spin-polarization of a large ensemble of electrons: this new approach offers the prospect of accessing the quantum properties of the electron, and is a candidate approach to the construction of solid-state spin-based qubits.

In this paper, we give an overview of the research on fluxgate magnetometers carried out in Spain. In particular we focus in the development of the planar-type instruments. We summarize the fabrication processes and signal processing developments as well as their use in complex systems and space.