Sign control of magnetoresistance through chemically engineered interfaces.

Authors :: Ciudad D
Gobbi M
Kinane CJ
Eich M
Moodera JS
Hueso LE
Source :: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2014 Dec 03; Vol. 26 (45), pp. 7561-7. Date of Electronic Publication: 2014 Oct 22.
Publication Year :: 2014
Abstract: Chemically engineered interfaces are shown to produce inversions of the magnetoresistance in spintronic devices including lithium fluoride interlayers. This behavior is explained by the formation of anti-ferromagnetic difluoride layers. By changing the order of deposition of the different materials, the sign of the magnetoresistance can be deterministically controlled both in organic spin valves and in inorganic magnetic tunnel junctions.<br /> (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)