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163 results on '"Chen, X.S."'

6. The detector system of the Daya Bay reactor neutrino experiment

Author

An, F.P., Bai, J.Z., Balantekin, A.B., Band, H.R., Beavis, D., Beriguete, W., Bishai, M., Blyth, S., Brown, R.L., Butorov, I., Cao, D., Cao, G.F., Cao, J., Carr, R., Cen, W.R., Chan, W.T., Chan, Y.L., Chang, J.F., Chang, L.C., Chang, Y., Chasman, C., Chen, H.Y., Chen, H.S., Chen, M.J., Chen, Q.Y., Chen, S.J., Chen, S.M., Chen, X.C., Chen, X.H., Chen, X.S., Chen, Y.X., Chen, Y., Cheng, J.H., Cheng, J., Cheng, Y.P., Cherwinka, J.J., Chidzik, S., Chow, K., Chu, M.C., Cummings, J.P., de Arcos, J., Deng, Z.Y., Ding, X.F., Ding, Y.Y., Diwan, M.V., Dong, L., Dove, J., Draeger, E., Du, X.F., Dwyer, D.A., Edwards, W.R., Ely, S.R., Fang, S.D., Fu, J.Y., Fu, Z.W., Ge, L.Q., Ghazikhanian, V., Gill, R., Goett, J., Gonchar, M., Gong, G.H., Gong, H., Gornushkin, Y.A., Grassi, M., Greenler, L.S., Gu, W.Q., Guan, M.Y., Guo, R.P., Guo, X.H., Hackenburg, R.W., Hahn, R.L., Han, R., Hans, S., He, M., He, Q., He, W.S., Heeger, K.M., Heng, Y.K., Higuera, A., Hinrichs, P., Ho, T.H., Hoff, M., Hor, Y.K., Hsiung, Y.B., Hu, B.Z., Hu, L.M., Hu, L.J., Hu, T., Hu, W., Huang, E.C., Huang, H.Z., Huang, H.X., Huang, P.W., Huang, X., Huang, X.T., Huber, P., Hussain, G., Isvan, Z., Jaffe, D.E., Jaffke, P., Jen, K.L., Jetter, S., Ji, X.P., Ji, X.L., Jiang, H.J., Jiang, W.Q., Jiao, J.B., Johnson, R.A., Joseph, J., Kang, L., Kettell, S.H., Kohn, S., Kramer, M., Kwan, K.K., Kwok, M.W., Kwok, T., Lai, C.Y., Lai, W.C., Lai, W.H., Langford, T.J., Lau, K., Lebanowski, L., Lee, J., Lee, M.K.P., Lei, R.T., Leitner, R., Leung, J.K.C., Lewis, C.A., Li, B., Li, C., Li, D.J., Li, F., Li, G.S., Li, J., Li, N.Y., Li, Q.J., Li, S.F., Li, S.C., Li, W.D., Li, X.B., Li, X.N., Li, X.Q., Li, Y., Li, Y.F., Li, Z.B., Liang, H., Liang, J., Lin, C.J., Lin, G.L., Lin, P.Y., Lin, S.X., Lin, S.K., Lin, Y.C., Ling, J.J., Link, J.M., Littenberg, L., Littlejohn, B.R., Liu, B.J., Liu, C., Liu, D.W., Liu, H., Liu, J.L., Liu, J.C., Liu, S., Liu, S.S., Liu, X., Liu, Y.B., Lu, C., Lu, H.Q., Lu, J.S., Luk, A., Luk, K.B., Luo, T., Luo, X.L., Ma, L.H., Ma, Q.M., Ma, X.Y., Ma, X.B., Ma, Y.Q., Mayes, B., McDonald, K.T., McFarlane, M.C., McKeown, R.D., Meng, Y., Mitchell, I., Mohapatra, D., Monari Kebwaro, J., Morgan, J.E., Nakajima, Y., Napolitano, J., Naumov, D., Naumova, E., Newsom, C., Ngai, H.Y., Ngai, W.K., Nie, Y.B., Ning, Z., Ochoa-Ricoux, J.P., Olshevskiy, A., Pagac, A., Pan, H.-R., Patton, S., Pearson, C., Pec, V., Peng, J.C., Piilonen, L.E., Pinsky, L., Pun, C.S.J., Qi, F.Z., Qi, M., Qian, X., Raper, N., Ren, B., Ren, J., Rosero, R., Roskovec, B., Ruan, X.C., Sands, W.R., III, Seilhan, B., Shao, B.B., Shih, K., Song, W.Y., Steiner, H., Stoler, P., Stuart, M., Sun, G.X., Sun, J.L., Tagg, N., Tam, Y.H., Tanaka, H.K., Tang, W., Tang, X., Taychenachev, D., Themann, H., Torun, Y., Trentalange, S., Tsai, O., Tsang, K.V., Tsang, R.H.M., Tull, C.E., Tung, Y.C., Viaux, N., Viren, B., Virostek, S., Vorobel, V., Wang, C.H., Wang, L.S., Wang, L.Y., Wang, L.Z., Wang, M., Wang, N.Y., Wang, R.G., Wang, T., Wang, W., Wang, W.W., Wang, X.T., Wang, X., Wang, Y.F., Wang, Z., Wang, Z.M., Webber, D.M., Wei, H.Y., Wei, Y.D., Wen, L.J., Wenman, D.L., Whisnant, K., White, C.G., Whitehead, L., Whitten, C.A., Jr., Wilhelmi, J., Wise, T., Wong, H.C., Wong, H.L.H., Wong, J., Wong, S.C.F., Worcester, E., Wu, F.F., Wu, Q., Xia, D.M., Xia, J.K., Xiang, S.T., Xiao, Q., Xing, Z.Z., Xu, G., Xu, J.Y., Xu, J.L., Xu, J., Xu, W., Xu, Y., Xue, T., Yan, J., Yang, C.G., Yang, L., Yang, M.S., Yang, M.T., Ye, M., Yeh, M., Yeh, Y.S., Yip, K., Young, B.L., Yu, G.Y., Yu, Z.Y., Zeng, S., Zhan, L., Zhang, C., Zhang, F.H., Zhang, H.H., Zhang, J.W., Zhang, K., Zhang, Q.X., Zhang, Q.M., Zhang, S.H., Zhang, X.T., Zhang, Y.C., Zhang, Y.H., Zhang, Y.M., Zhang, Y.X., Zhang, Z.J., Zhang, Z.Y., Zhang, Z.P., Zhao, J., Zhao, Q.W., Zhao, Y.F., Zhao, Y.B., Zheng, L., Zhong, W.L., Zhou, L., Zhou, N., Zhou, Z.Y., Zhuang, H.L., Zimmerman, S., and Zou, J.H.

Published
2016
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22. Electric field enhanced hydrogen storage on polarizable materials substrates

Author

Zhou, J., Wang, Q., Sun, Q., Jena, P., and Chen, X.S.

Subjects
Polarization (Electricity) -- Research, Science and technology
Abstract

Using density functional theory, we show that an applied electric field can substantially improve the hydrogen storage properties of polarizable substrates. This new concept is demonstrated by adsorbing a layer of hydrogen molecules on a number of nanomaterials. When one layer of [H.sub.2] molecules is adsorbed on a BN sheet, the binding energy per [H.sub.2] molecule increases from 0.03 eV/[H.sub.2] in the field-free case to 0.14 eV/[H.sub.2] in the presence of an electric field of 0.045 a.u. The corresponding gravimetric density of 7.5 wt% is consistent with the 6 wt% system target set by Department of Energy for 2010. The strength of the electric field can be reduced if the substrate is more polarizable. For example, a hydrogen adsorption energy of 0.14 eV/[H.sub.2] can be achieved by applying an electric field of 0.03 a.u. on an AIN substrate, 0.006 a.u. on a silsesquioxane molecule, and 0.007 a.u. on a silsesquioxane sheet. Thus, application of an electric field to a polarizable substrate provides a novel way to store hydrogen; once the applied electric field is removed, the stored Hz molecules can be easily released, thus making storage reversible with fast kinetics. In addition, we show that materials with rich low-coordinated nonmetal anions are highly polarizable and can serve as a guide in the design of new hydrogen storage materials. energetics [ kinetics | nanomaterials | polarization | reversibility www.pnas.org/cgi/doi/10.1073/pnas.0905571107

Published
2010

39. Influence of polarization-induced electric fields on coherent electron tunneling in AlN/GaN coupled double quantum wells

Author

Cen, L.B., Shen, B., Huang, C.C., Xu, F.J., Qin, Z.X., Zhang, G.Y., Chen, X.S., and Lu, W.

Subjects
Aluminum nitride -- Electric properties, Aluminum nitride -- Optical properties, Gallium compounds -- Electric properties, Gallium compounds -- Optical properties, Poisson distribution -- Usage, Polarization (Electricity) -- Analysis, Quantum wells -- Analysis, Physics
Abstract

The impact of polarization-induced electric fields on the coherent electron tunneling probability in AlN/GaN coupled double quantum wells (CDQWs) is examined by solving Schrodinger and Poisson equations. The coherent electron tunneling probability has decreased with the increased in the polarization-induced electric fields, which is attributed to the resonance between the [E.sub.2] and [E.sub.3] subbands weakening with the polarization-induced electric fields increasing in AlN/GaN CDQWs.

Published
2010

40. The role of ultrathin AlN barrier in the reduction in the hot electron and self-heating effects for GaN-based double-heterojunction high electron mobility transistors

Author

Wang, L., Hu, W.D., Chen, X.S., and Lu, W.

Subjects
Aluminum nitride -- Electric properties, Aluminum nitride -- Thermal properties, Gallium compounds -- Electric properties, Gallium compounds -- Thermal properties, High-electron-mobility transistors -- Structure, High-electron-mobility transistors -- Composition, Indium -- Electric properties, Indium -- Thermal properties, Physics
Abstract

An AlN/GaN/InGaN/GaN double-heterojunction high electron mobility transistor (DH-HEMT) structure with a thin AlN barrier layer is described and the performance of the DH-HEMT device is examined by using two-dimensional numerical simulation. The results have shown that the ultrathin AlN barrier layer has reduced thermal impedance, has lowered the self-heating effect and the passivation layer has a major role in the self-heating effect of the ultrathin barrier DH-HEMTs.

Published
2010

41. Analysis of temperature dependence of dark current mechanisms for long-wavelength HgCdTe photovoltaic infrared detectors

Author

Hu, W.D., Chen, X.S., Yin, F., Quan, Z.J., Ye, Z.H., Hu, X.N., Li, Z.F., and Lu, W.

Subjects
Cadmium -- Electric properties, Cadmium -- Thermal properties, Cadmium -- Optical properties, Dark current -- Measurement, Electric resistance -- Evaluation, Mercury -- Electric properties, Mercury -- Thermal properties, Mercury -- Optical properties, Tellurium -- Electric properties, Tellurium -- Thermal properties, Tellurium -- Optical properties, Physics
Abstract

Experimental characterization of resistance-voltage curves of n-on-p [Hg.sub.1-x][Cd.sub.x]Te long-wavelength infrared photodiodes forming 128-element array measured in the temperature range of 40-150 K is presented. The modeling of the dynamic resistance in small voltage range are not sufficient to determine the mechanism of carrier transport across the [Hg.sub.1-x][Cd.sub.x]Te junction and hence called for a need to carry out detailed theoretical study of the current-voltage characteristics in wider voltage range or at various temperatures.

Published
2009

42. Two-dimensional transient simulations of drain lag and current collapse in GaN-based high-electron-mobility transistors

Author

Hu, W.D., Chen, X.S., Yin, F., Zhang, J.B., and W. Lu

Subjects
Gallium compounds -- Electric properties, Gallium compounds -- Structure, High-electron-mobility transistors -- Evaluation, Quantum wells -- Structure, Quantum wells -- Electric properties, Physics
Abstract

A two-dimensional numerical simulation is employed to study the intrinsic mechanisms of drain lag and current collapse in GaN-based high-electron-mobility transistors. The results revealed that better electron localization that could reduce the current collapse is possible by considering quantum-well high-electron-mobility transistors.

Published
2009

43. Self-heating simulation of GaN-based metal-oxide-semiconductor high-electron-mobility transistors including hot electron and quantum effects

Author

Hu, W.D., Chen, X.S., Wuan, Z.J., Xia, C.S., Lu W., and Ye, P.D.

Subjects
Gallium compounds -- Thermal properties, Gallium compounds -- Electric properties, High-electron-mobility transistors -- Thermal properties, High-electron-mobility transistors -- Electric properties, Polarization (Electricity) -- Analysis, Physics
Abstract

The results of self-heating simulations of the GaN-based metal-oxide-semiconductor high electron-mobility transistors (MOS-HEMTs), including hot electron and quantum effects are reported using two-dimensional numerical simulator. Results reveal that the presence of the interface charges and traps are directly responsible for the observed current collapse and device switching in the GaN-based MOS-HEMTs.

Published
2006

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