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By employing photoluminescence (PL) spectroscopy under dual-wavelength optical excitation, we uncover the presence of deep-level hole traps in Ga(In)NP alloys grown by molecular beam epitaxy (MBE). The energy level positions of the traps are determined to be at 0.56 eV and 0.78 eV above the top of the valance band. We show that photo-excitation of the holes from the traps, by a secondary light source with a photon energy below the bandgap energy, can lead to a strong enhancement (up to 25%) of the PL emissions from the alloys under a primary optical excitation above the bandgap energy. We further demonstrate that the same hole traps can be found in various MBE-grown Ga(In)NP alloys, regardless of their growth temperatures, chemical compositions, and strain. The extent of the PL enhancement induced by the hole de-trapping is shown to vary between different alloys, however, likely reflecting their different trap concentrations. The absence of theses traps in the GaNP alloy grown by vapor phase epitaxy suggests that their incorporation could be associated with a contaminant accompanied by the N plasma source employed in the MBE growth, possibly a Cu impurity. [ABSTRACT FROM AUTHOR]

We report a detailed investigation of the temperature dependence of the band-edge excitonic transitions of three Zn1-x-yBexMgySe mixed crystals using contactless electroreflectance (CER) and photoreflectance (PR) in the temperature range of 15–400 K. The samples were grown by the modified high pressure Bridgman methods. The fundamental transition energy E0 and broadening parameters are determined via a lineshape function fit to the CER and PR spectra. The parameters that describe the temperature dependence of the band-edge excitonic transition energy and broadening parameters are evaluated and discussed. [ABSTRACT FROM AUTHOR]

In this study, the optical properties of niobium-doped rhenium disulphide (ReS2:Nb) single crystals have been reported. The doping effects of the material were characterized by polarization-dependent transmittance, photoluminescence (PL), and piezoreflectance (PzR) measurements in the temperature range of 10–300 K. The indirect energy gap of ReS2:Nb shows a slight redshift with respect to the undoped sample. The low temperature PL spectra reveal two near direct band-edge excitonic peaks as well as two additional prominent features at higher energy side. The results agree well with that of the PzR investigation of the sample. In comparison with the undoped ReS2, the excitonic transition energies remain practically unchanged, while the broadening parameter of the excitonic transition features slightly increases due to impurity scattering. In addition, the parameters that describe the temperature variations of the band-edge excitonic transitions were evaluated and discussed. [ABSTRACT FROM AUTHOR]

InGaN ternary alloys have been studied with photoluminescence, photoluminescence excitation spectroscopy, scanning electron microscopy, and cathodoluminescence spectroscopy. The relatively large Stokes shift observed in the photoluminescence and photoluminescence excitation spectroscopy has been found to be consistent with previous results reported in the literature. By correlating our experimental findings and others reported in the literature with those of scanning electron microscopy and cathodoluminescence spectroscopy, we conclude that the physical origin of the Stokes shift in InGaN ternary alloy system is primarily due to the effects of alloy composition fluctuations. A plausible model responsible for the observed Stokes shift is proposed. [ABSTRACT FROM AUTHOR]

Presents information on the measurement of the photoreflectance spectra of a strained layer (001) In[sub0.21]Ga[sub0.79]As/gallium arsenide single quantum well (SQW). Preparation of the SQW; Line shape considerations.

In this paper we present an extended version of Hilbert-Huang transform, namely arbitrary-order Hilbert spectral analysis, to characterize the scale-invariant properties of a time series directly in an amplitude-frequency space. We first show numerically that due to a nonlinear distortion, traditional methods require high-order harmonic components to represent nonlinear processes, except for the Hilbert-based method. This will lead to an artificial energy flux from the low-frequency (large scale) to the high-frequency (small scale) part. Thus the power law, if it exists, is contaminated. We then compare the Hilbert method with structure functions (SF), detrended fluctuation analysis (DFA), and wavelet leader (WL) by analyzing fractional Brownian motion and synthesized multifractal time series. For the former simulation, we find that all methods provide comparable results. For the latter simulation, we perform simulations with an intermittent parameter μ=0.15. We find that the SF underestimates scaling exponent when q>3. The Hilbert method provides a slight underestimation when q>5. However, both DFA and WL overestimate the scaling exponents when q>5. It seems that Hilbert and DFA methods provide better singularity spectra than SF and WL. We finally apply all methods to a passive scalar (temperature) data obtained from a jet experiment with a Taylor's microscale Reynolds number Reλ≃250. Due to the presence of strong ramp-cliff structures, the SF fails to detect the power law behavior. For the traditional method, the ramp-cliff structure causes a serious artificial energy flux from the low-frequency (large scale) to the high-frequency (small scale) part. Thus DFA and WL underestimate the scaling exponents. However, the Hilbert method provides scaling exponents ξθ(q) quite close to the one for longitudinal velocity, indicating a less intermittent passive scalar field than what was believed before. [ABSTRACT FROM AUTHOR]