Temperature dependence of the photoreflectance of a strained layer (001) In0.21Ga0.79As/GaAs single quantum well.

Authors :: Huang, Y. S.
Qiang, H.
Pollak, Fred H.
Pettit, G. D.
Kirchner, P. D.
Woodall, J. M.
Stragier, Hans
Sorensen, Larry B.
Source :: Journal of Applied Physics. 12/15/1991, Vol. 70 Issue 12, p7537. 6p.
Publication Year :: 1991
Abstract: Presents information on the measurement of the photoreflectance spectra of a strained layer (001) In[sub0.21]Ga[sub0.79]As/gallium arsenide single quantum well (SQW). Preparation of the SQW; Line shape considerations.

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