1. Attainment of low interfacial trap density absent of a large midgap peak in In0.2Ga0.8As by Ga2O3(Gd2O3) passivation.
- Author
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Lin, C. A., Chiu, H. C., Chiang, T. H., Lin, T. D., Chang, Y. H., Chang, W. H., Chang, Y. C., Wang, W.-E., Dekoster, J., Hoffmann, T. Y., Hong, M., and Kow, J.
- Subjects
INTERFACES (Physical sciences) ,BAND gaps ,GALLIUM compounds ,PASSIVE components ,DIELECTRICS ,METAL oxide semiconductor field-effect transistors ,TEMPERATURE effect ,CAPACITORS - Abstract
The pronounced high interfacial densities of states (D
it ) commonly observed around the midgap energy of dielectric/GaAs interfaces are generally considered the culprit responsible for the poor electrical performance of the corresponding inversion-channel metal-oxide-semiconductor field-effect-transistors. In this work, comprehensive Dit spectra as the function of energy [Dit (E)] inside the In0.2 Ga0.8 As band gap were constructed by using the quasistatic capacitance-voltage and the temperature-dependent conductance method on n- and p-type ultrahigh vacuum (UHV)-Ga2 O3 (Gd2 O3 )/In0.2 Ga0.8 As and atomic-layer-deposited (ALD)-Al2 O3 /In0.2 Ga0.8 As metal-oxide-semiconductor capacitors. Unlike the ALD-Al2 O3 /In0.2 Ga0.8 As interface giving a Dit spectrum with a high midgap Dit peak, the UHV-Ga2 O3 (Gd2 O3 )/In0.2 Ga0.8 As interface shows a Dit spectrum that monotonically decreases from the valence band to the conduction band with no discernible midgap peak. [ABSTRACT FROM AUTHOR]- Published
- 2011
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