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It was found that the hydrogenation of ion-doped gallium arsenide structures leads to an increase in the sink breakdown voltage of high-power microwave Schottky barrier field effect transistors based on such structures (from 7 up to 17 V) and in the power of related microwave integration circuits (by a factor of up to 2.4). Data characterizing the dependence of the increase in the transistor breakdown voltage and the device power on the hydrogenation regime are presented. Possible mechanisms explaining the effect of hydrogenation on the electrical properties of gallium arsenide and the parameters of semiconductor devices are considered.

It was found that the hydrogenation of ion-doped n+-n-n i -GaAs structures in atomic hydrogen increases the rate of conductivity relaxation in the doped layers, decreases the effect of bias voltage applied to the n+-GaAs layer on the photoconductivity, and improves characteristics of the Schottky barrier transistors and the related integrated circuits. These phenomena are probably due to the formation of hydrogen complexes with electrically active centers in GaAs.

It has been established that hydrogenation of ion-doped gallium arsenide structures can be used to suppress parasitic backgating. Curves describing the degree of suppression of the backgating as a function of the hydrogenation regimes are given. The observed dependence is evidently caused by the formation and decay of hydrogen complexes with deep centers.