Suppression of parasitic backgating by hydrogenation of ion-doped gallium arsenide structures

It has been established that hydrogenation of ion-doped gallium arsenide structures can be used to suppress parasitic backgating. Curves describing the degree of suppression of the backgating as a function of the hydrogenation regimes are given. The observed dependence is evidently caused by the formation and decay of hydrogen complexes with deep centers.