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Your search keyword '"Bakarov, A. K."' showing total 10 results
Start Over Author "Bakarov, A. K." Journal technical physics letters
10 results on '"Bakarov, A. K."'

4. The electrons drift velocity overshot in inverted transistor heterostructures with donor-acceptor doping and additional digital potential barriers

Author

null Tereshkin E. V., null Rogachev I. A., null Protasov D. Ju., null Karpov S. N., null Lukashin V. M, null Lapin V. G., null Zhuravlev K. S., null Bakarov A. K., null Bogdanov S. A., and null Pashkovskii A. B.

Abstract

The first results of the electrons drift velocity study in inverted AlGaAs/InGaAs/GaAs pseudomorphic heterostructures with donor-acceptor doping and short-period AlAs/GaAs superlattices are presented. It is theoretically shown that the introduction of superlattices significantly, up to one and a half times, increases the electrons drift velocity overshot when they enter the region of a strong field. Localized states in the superlattice between the quantum well and the substrate have been found. It is shown that this effect leads to an additional increase in the electrons drift velocity overshot up to the theoretical limit for the model used, i. e., a drift velocity overshot in the bulk material of the quantum well. Keywords: inverted heterostructure, digital barriers, field-effect transistor, gain.

Published
2022

9. The Formation of InAs Quantum Dots in an Aluminum Oxide Matrix.

Author

Tenne, D. A., Bajutova, O. R., Bakarov, A. K., Kalagin, A. K., Milekhin, A. G., Toropov, A. I., and Zahn, D. R. T.

Subjects
QUANTUM dots, ALUMINUM oxide, HETEROSTRUCTURES
Abstract

The formation of InAs quantum dots in an aluminum oxide matrix by selective oxidation of AlAs layers in an InAs/AlAs heterostructure is studied. According to the Raman spectroscopy data, the process of selective oxidation leads to stress relaxation in the InAs quantum dots and to the formation of amorphous arsenic at the boundary between oxidized and unoxidized regions. [ABSTRACT FROM AUTHOR]

Published
2002
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10. Lasing characteristics of lasers with a vertical cavity based on In[sub 0.2]Ga[sub 0.8]As quantum wells.

Author

Gaısler, V. A., Toropov, A. I., Bakarov, A. K., Kalagin, A. K., Moshegov, N. T., Ténné, D. A., Kachanova, M. M., Kopp, O. R., Nenasheva, L. A., and Medvedev, A. S.

Subjects
SEMICONDUCTOR lasers, GALLIUM arsenide semiconductors
Abstract

Semiconductor lasers with a vertical cavity with a high external quantum efficiency and high radiation power have been developed and constructed. Powers up to 10 W at T=300 K and 20 W at T= 250 K have been obtained for 500 µm aperture lasers operating in the pulsed regime. [ABSTRACT FROM AUTHOR]

Published
1999
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