Lasing characteristics of lasers with a vertical cavity based on In[sub 0.2]Ga[sub 0.8]As quantum wells.

Authors :: Gaısler, V. A.
Toropov, A. I.
Bakarov, A. K.
Kalagin, A. K.
Moshegov, N. T.
Ténné, D. A.
Kachanova, M. M.
Kopp, O. R.
Nenasheva, L. A.
Medvedev, A. S.
Source :: Technical Physics Letters; Oct99, Vol. 25 Issue 10, p775, 3p
Publication Year :: 1999
Abstract: Semiconductor lasers with a vertical cavity with a high external quantum efficiency and high radiation power have been developed and constructed. Powers up to 10 W at T=300 K and 20 W at T= 250 K have been obtained for 500 µm aperture lasers operating in the pulsed regime. [ABSTRACT FROM AUTHOR]

Full Text Access

Tools