Search

WOS: 000300022700001, Using the effective-mass approximation within a variational scheme, we have calculated the diamagnetic susceptibility and binding energy of a hydrogenic donor in a quantum well under different temperatures and hydrostatic pressure conditions. Our calculation have revealed the dependence of the diamagnetic susceptibility and the impurity binding on temperature and hydrostatic pressure.

WOS: 000271864200007, Valence band structure with spin-orbit (SO) coupling of GaAs/Ga1-xAlxAs square quantum well (SQW) under the electric field by a calculation procedure based on a finite element method (FEM) is investigated using the multiband effective mass theory ((k) over right arrow . (p) over right arrow method). The validity of the method is confirmed with the results of D. Ahn, S. L. Chuang and Y. C. Chang (J. Appl. Phys. 64 (1998) 4056), who calculated valence band structure, using axial approximation for Luttinger-Kohn Hamiltonian and finite difference method. Our results demonstrated that SO coupling and electric field have significant effects on the valence band structure., T. R. Prime Ministry State Planning Organization [DPT-120220], The authors would like to thank the T. R. Prime Ministry State Planning Organization for financial support (project No. DPT-120220).

WOS: 000245999400003, Using a variational approach, we have calculated the photo-ionization cross-section of a shallow donor impurity in a quantum dot with finite and infinite potential barriers in the presence of an electric field as a function of the photon energy. Our calculations have revealed the dependence of the photodonization cross-section on the electric field, the size of the quantum dot and the impurity position.