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THE ELECTRIC FIELD DEPENDENCE OF THE PHOTOIONIZATION CROSS-SECTION OF SHALLOW DONOR IMPURITIES IN QUANTUM DOTS: INFINITE AND FINITE MODEL
- Source :
- Surface Review and Letters. 13:747-752
- Publication Year :
- 2006
- Publisher :
- World Scientific Pub Co Pte Lt, 2006.
-
Abstract
- WOS: 000245999400003<br />Using a variational approach, we have calculated the photo-ionization cross-section of a shallow donor impurity in a quantum dot with finite and infinite potential barriers in the presence of an electric field as a function of the photon energy. Our calculations have revealed the dependence of the photodonization cross-section on the electric field, the size of the quantum dot and the impurity position.
- Subjects :
- Photoionization, quantum dot, donor impurity, 71.55.Eq, 71.55.-I, 78.67.Hc
Chemistry
donor impurity
quantum dot
Surfaces and Interfaces
Photoionization
Photon energy
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Condensed Matter Physics
Surfaces, Coatings and Films
Cross section (physics)
Quantum dot
Impurity
Position (vector)
Electric field
Materials Chemistry
Atomic physics
photoionization
Shallow donor
Subjects
Details
- ISSN :
- 17936667 and 0218625X
- Volume :
- 13
- Database :
- OpenAIRE
- Journal :
- Surface Review and Letters
- Accession number :
- edsair.doi.dedup.....9afd3391b27df3e284c6862108df56fa
- Full Text :
- https://doi.org/10.1142/s0218625x06008797