Search

Your search keyword '"Sewell J"' showing total 11 results
Start Over Author "Sewell J" Journal solid-state electronics
11 results on '"Sewell J"'

1. Small signal measurement of Sc2O3 AlGaN/GaN moshemts

Author

Luo, B., primary, Mehandru, R., additional, Kang, B.S., additional, Kim, J., additional, Ren, F., additional, Gila, B.P., additional, Onstine, A.H., additional, Abernathy, C.R., additional, Pearton, S.J., additional, Gotthold, D., additional, Birkhahn, R., additional, Peres, B., additional, Fitch, R., additional, Gillespie, J.K., additional, Jenkins, T., additional, Sewell, J., additional, Via, D., additional, and Crespo, A., additional

Published
2004
Full Text
View/download PDF

2. Uniformity of dc and rf performance of MBE-grown AlGaN/GaN HEMTS on HVPE-grown buffers

Author

Gillespie, J.K., primary, Fitch, R.C., additional, Moser, N., additional, Jenkins, T., additional, Sewell, J., additional, Via, D., additional, Crespo, A., additional, Dabiran, A.M., additional, Chow, P.P., additional, Osinsky, A., additional, Mastro, M.A., additional, Tsvetkov, D., additional, Soukhoveev, V., additional, Usikov, A., additional, Dmitriev, V., additional, Luo, B., additional, Pearton, S.J., additional, and Ren, F., additional

Published
2003
Full Text
View/download PDF

3. Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors

Author

Luo, B., primary, Ren, F., additional, Allums, K.K., additional, Gila, B.P., additional, Onstine, A.H., additional, Abernathy, C.R., additional, Pearton, S.J., additional, Dwivedi, R., additional, Fogarty, T.N., additional, Wilkins, R., additional, Fitch, R.C., additional, Gillespie, J.K., additional, Jenkins, T.J., additional, Dettmer, R., additional, Sewell, J., additional, Via, G.D., additional, Crespo, A., additional, Baca, A.G., additional, and Shul, R.J., additional

Published
2003
Full Text
View/download PDF

4. The role of cleaning conditions and epitaxial layer structure on reliability of Sc2O3 and MgO passivation on AlGaN/GaN HEMTS

Author

Luo, B, primary, Mehandru, R.M, additional, Kim, Jihyun, additional, Ren, F, additional, Gila, B.P, additional, Onstine, A.H, additional, Abernathy, C.R, additional, Pearton, S.J, additional, Fitch, R.C, additional, Gillespie, J, additional, Dellmer, R, additional, Jenkins, T, additional, Sewell, J, additional, Via, D, additional, and Crespo, A, additional

Published
2002
Full Text
View/download PDF

5. Base and collector resistances in heterojunction bipolar transistors

Author

Anholt, R., primary, Bozada, C., additional, Desalvo, G., additional, Dettmer, R., additional, Ebel, J., additional, Gillespie, J., additional, Jenkins, T., additional, Havasy, C., additional, Ito, C., additional, Nakano, K., additional, Pettiford, C., additional, Quach, T., additional, Sewell, J., additional, and Via, D., additional

Published
1997
Full Text
View/download PDF

6. Thermal management of microwave power heterojunction bipolar transistors

Author

Bozada, C., primary, Cerny, C., additional, De Salvo, G., additional, Dettmer, R., additional, Ebel, J., additional, Gillespie, J., additional, Havasy, C., additional, Jenkins, T., additional, Ito, C., additional, Nakano, K., additional, Pettiford, C., additional, Quach, T., additional, Sewell, J., additional, Via, G.D., additional, and Anholt, R., additional

Published
1997
Full Text
View/download PDF

7. Emitter utilization in heterojunction bipolar transistors

Author

Quach, T., primary, Jenkins, T., additional, Barrette, J., additional, Bozada, C., additional, Cerny, C., additional, Desalvo, G., additional, Dettmer, R., additional, Ebel, J., additional, Gillespie, J., additional, Havasy, C., additional, Ito, C., additional, Nakano, K., additional, Pettiford, C., additional, Sewell, J., additional, Via, D., additional, and Anholt, R., additional

Published
1997
Full Text
View/download PDF

9. Small signal measurement of Sc2O3 AlGaN/GaN moshemts

Author

Luo, B., Mehandru, R., Kang, B.S., Kim, J., Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Gotthold, D., Birkhahn, R., Peres, B., Fitch, R., Gillespie, J.K., Jenkins, T., Sewell, J., Via, D., and Crespo, A.

Subjects
*GALLIUM nitride, *DIELECTRICS, *GALLIUM alloys
Abstract

The rf performance of 1 × 200 μm2 AlGaN/GaN MOS-HEMTs with Sc2O3 used as both the gate dielectric and as a surface passivation layer is reported. A maximum fT of ∼11 GHz and fMAX of 19 GHz were obtained. The equivalent device parameters were extracted by fitting this data to obtain the transconductance, drain resistance, drain–source resistance, transfer time and gate–drain and gate–source capacitance as a function of gate voltage. The transfer time is in the order 0.5–1 ps and decreases with increasing gate voltage. [Copyright &y& Elsevier]

Published
2004
Full Text
View/download PDF

10. Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors

Author

Luo, B., Ren, F., Allums, K.K., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Dwivedi, R., Fogarty, T.N., Wilkins, R., Fitch, R.C., Gillespie, J.K., Jenkins, T.J., Dettmer, R., Sewell, J., Via, G.D., Crespo, A., Baca, A.G., and Shul, R.J.

Subjects
*TRANSISTORS, *SOLID state electronics
Abstract

AlGaN/GaN high electron mobility transistors with either MgO or Sc2O3 surface passivation were irradiated with 40 MeV protons at a dose of 5×109 cm−2. While both forward and reverse bias current were decreased in the devices as a result of decreases in channel doping and introduction of generation–recombination centers, there was no significant change observed in gate lag measurements. By sharp contrast, unpassivated devices showed significant decreases in drain current under pulsed conditions for the same proton dose. These results show the effectiveness of the oxide passivation in mitigating the effects of surface states present in the as-grown structures and also of surface traps created by the proton irradiation. [Copyright &y& Elsevier]

Published
2003
Full Text
View/download PDF

11. The role of cleaning conditions and epitaxial layer structure on reliability of Sc2O3 and MgO passivation on AlGaN/GaN HEMTS

Author

Luo, B., Mehandru, R.M., Kim, Jihyun, Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Fitch, R.C., Gillespie, J., Dellmer, R., Jenkins, T., Sewell, J., Via, D., and Crespo, A.

Subjects
*GALLIUM nitride, *MODULATION-doped field-effect transistors
Abstract

The effect of layer structure (GaN versus AlGaN cap) and cleaning procedure prior to Sc2O3 or MgO deposition at 100 °C were examined for their effects on the long-term bias-stress stability of AlGaN/GaN high electron mobility transistors (HEMTs). Surface cleaning by itself was not sufficient to prevent current collapse in the devices. The forward and reverse gate leakage currents were decreased under most conditions upon deposition of the oxide passivation layers. After ≈13 h of bias-stressing, the MgO-passivated HEMTs retain ⩾90% their initial drain–source current. The Sc2O3-passivated devices retained ∼80% recovery of the current under the same conditions. [Copyright &y& Elsevier]

Published
2002
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results