Search

Your search keyword '"König, U."' showing total 12 results
Start Over Author "König, U." Journal solid-state electronics
12 results on '"König, U."'

1. Strained Si HFETs for microwave applications: state-of-the-art and further approaches

Author

Enciso Aguilar, M., primary, Rodriguez, M., additional, Zerounian, N., additional, Aniel, F., additional, Hackbarth, T., additional, Herzog, H.-J., additional, König, U., additional, Mantl, S., additional, Holländer, B., additional, Chrastina, D., additional, Isella, G., additional, von Känel, H., additional, Lyutovich, K., additional, and Oehme, M., additional

Published
2004
Full Text
View/download PDF

6. Design rules for n-type SiGe hetero FETs

Author

König, U., primary, Glück, M., additional, Gruhle, A., additional, Höck, G., additional, Kohn, E., additional, Bozon, B., additional, Nuernbergk, D., additional, Ostermann, T., additional, and Hagelauer, R., additional

Published
1997
Full Text
View/download PDF

11. Strained silicon FETs on thin SiGe virtual substrates produced by He implantation: effect of reduced self-heating on DC and RF performance

Author

Hackbarth, T., Herzog, H.-J., Hieber, K.-H., König, U., Mantl, S., Holländer, B., Lenk, St., von Känel, H., Enciso, M., Aniel, F., and Giguerre, L.

Subjects
*CHROMOGENIC compounds, *HEATING, *SILICON, *POTENTIAL theory (Physics)
Abstract

Strained-Si based SiGe MODFETs on ultra-thin SiGe virtual substrates prepared by molecular beam epitaxy (MBE) and helium implantation are presented and compared to similar devices on thick, compositionally graded virtual substrates grown by low energy plasma enhanced CVD (LEPECVD). MBE grown 100 nm thick pseudomorphic Si0.67Ge0.33 layers have been relaxed to about 70% by using He+ ions implanted with a dose of 2 × 1016 cm-2 at an energy of 18 keV approximately 100 nm below the hetero-interface, followed by an annealing step at 850 °C for 600 s. Then another Si0.67Ge0.33 layer and a modulation doped strained Si QW are grown on top of the virtual substrate having a final degree of relaxation of about 80%. A cut-off frequency of fmax(MAG)=121 GHz was achieved with RF devices having a gate length of 70 nm. Self-heating effects in devices on thick, graded, and on thin buffer layers are addressed by experimental DC and RF data and 2-D numerical simulations of the device temperature. [Copyright &y& Elsevier]

Published
2004
Full Text
View/download PDF

12. High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET

Author

Aniel, F., Enciso-Aguilar, M., Giguerre, L., Crozat, P., Adde, R., Mack, T., Seiler, U., Hackbarth, Th., Herzog, H.J., König, U., and Raynor, B.

Subjects
*MODULATION-doped field-effect transistors, *QUANTUM electronics, *NOISE generators (Electronics)
Abstract

100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFETs have reached new record cut-off frequency fT of 74 GHz (105 GHz), with maximum oscillation frequency fmax of 107 GHz (170 GHz) at temperatures 300 K (50 K). Moreover they show a low noise figure NFmin of 0.4 dB and noise resistance Rn of 52 Ω at 2.5 GHz and 300 K. The dependence of electric parameters and RF performances of the device on biases and temperature is presented. Experimental results are compared with physical simulations at short gate lengths to analyze carrier transport and further device optimization. [Copyright &y& Elsevier]

Published
2003
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results