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Your search keyword '"Transient spectroscopy"' showing total 24 results

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24 results on '"Transient spectroscopy"'

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1. A study on the energy bands of multi-quantum wells in the quantum cascade laser structure by deep-level transient spectroscopy

2. The defect responsible for non-radiative recombination in GaAs materials

3. Activation energies of the EL6 trap and of the 0.15 eV donor and their correlation in GaAs

4. Investigation of defect levels in semi-insulating materials by modulated and transient photocurrent: comparison of methods

5. Deep levels in nitrogen-doped MBE-grown p-ZnSe

6. Investigation of Au Schottky contacts on GaN grown by molecular beam epitaxy

7. Bleaching of the interstitial iron donor in silicon by transition metal impurities

8. Electric-field-enhanced emission from radiation-induced hole traps in p-GaAs

9. Transformation of native defects in bulk GaAs under ultrasonic vibration

10. DLTS study of deep levels in Si substrates created by plasma treatment

11. Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique

12. Deep-level transient spectroscopy study of bonded wafers

13. Electrical field dependence of the emission properties of DX-related centres in AlGaAs

14. Palladium-related deep levels in silicon

15. Characterization of EL2 in GaAs wafers by scanning isothermal transient spectroscopy

16. Magnetic resonance studies of group IV and VI donors in Ga1-xAlxAs

17. Hole trap annealing in neutron-transmutation-doped silicon with different initial resistivities

18. A donor-like trap at the InGaN/GaN interface with net negative polarization and its possible consequence on internal quantum efficiency

19. Properties of GaAs:V grown by liquid phase epitaxy

21. Electrical properties of polysilicon n+-i-p junctions

22. The effect of electron irradiation on interface states of InP MIS Schottky diodes

23. A comparison of deep levels in rapidly thermal-processed GaAs films grown by molecular beam epitaxy on Si and GaAs substrates

24. Pressure dependence of the Pbcentre measured by voltage transient spectroscopy

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