Deep levels in nitrogen-doped MBE-grown p-ZnSe

Deep-level transient spectroscopy (DLTS) has been used to investigate and characterize deep-level defects in nitrogen-doped p-type ZnSe layers grown by molecular beam epitaxy on GaAs substrates. At least three prominent levels, H1, H3 and H4, are found in the lower-half bandgap with thermal activation energies 0.31 eV, 0.63 eV and 0.94 - 0.99 eV respectively. Comparison of their characteristics with the two previous reports shows that, with the exception of H3, these are new levels. In addition, some evidence is presented for three minority carrier (electron) peaks for the first time.