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We investigate the valley-dependent transport properties of electrons in a magnetic-strain graphene under the modulation of the Schottky metal (SM) stripe. The valley polarization can be achieved in such a graphene due to the effect of the strained barrier rather than the SM stripe. However, the SM stripe can play an important effect on the degree of the valley polarization, which can be easily controlled through changing the position and/or width of the SM stripe. Furthermore, the applied voltage on the SM stripe also can easily modulate the valley polarization. This study is very useful for understanding and designing the valleytronic devices.

The electron tunneling through a nonmagnetic heterostructure modulated by both the in-plane magnetic field and the δ -doping has been investigated in detail using the transfer-matrix method. The numerical results indicate that, in such a nonmagnetic device, one can obtain the considerable spin polarization which is dependent on the in-plane magnetic field and the δ -doping as well as the wave vector in the plane of the barrier. Thus, we can design the spintronic devices based on nonmagnetic heterostructures controlled by the in-plane magnetic field and the δ -doping as well as the wave vector.

As the key factor for designing the valleytronic devices is to well understand the valley-dependent transport mechanism in graphene, we investigate, in this work, the effect of two ferromagnetic (FM) metal stripes on the valley polarization in a graphene nanostructure with a strain. The nearly 100% valley polarization is observed at certain energy windows and it can be easily controlled through changing the width and the position of the FM stripe as well as the strength of the magnetic field induced by the FM stripe. Our interesting findings reveal the valley-dependent transport mechanism of electrons and promote the realization of the new types of valleytronic devices modulated by the FM stripe and the strain.

We theoretically investigate electron transport properties in a nanostructure modulated by the realistic magnetic field and the δ -doping. We find that the electron transport properties are strongly dependent on the weight and the position of the δ -doping. These interesting finds may be very helpful for designing the δ -doping-tunable spintronic devices.

We investigate the effect of the bias in an electron-spin filter based on a two-dimensional electron gas modulated by ferromagnetic-Schottky metal stripes. The numerical results show that the electron transmission and the conductance as well as the spin polarization are strongly dependent on the bias applied to the device.

The electron transport in a two-dimensional electron gas modulated by ferromagnetic and Schottky metal stripes is theoretically studied. We find that the transmission and conductance as well as polarization are very sensitive to the position of the Schottky metal stripe, the electric-barrier height and the energy of the incident electron.

We theoretically investigate the electron transport in a periodic non-magnetic heterostructure with both Dresselhaus and Rashba spin–orbit effects. We show that the transport properties obviously depend on the number of periods and the large spin polarization can be achieved in such a structure. We also show that for m > 1 , the resonance splitting occurs in the transmission curves of both spin-up and spin-down electrons when the transmission curves are plotted as a function of the electron energy or the well width.

We report on a theoretical study of spin-dependent electron transport in a magnetic nanostructure with the δ -doping. It is revealed that the transmission probability, the electron conductance and the spin-polarization obviously depend on the weight of the δ -doping. It is also revealed that the transmission probability and the spin-polarization ( P T ) both show a periodic profile with the increase of the length L 2 . These interesting phenomena will be more helpful for understanding the experimental physical phenomena in δ -doping and for making new types of devices.