Effect of an in-plane magnetic field and a δ -doping on the electron transport in a nonmagnetic heterostructure

The electron tunneling through a nonmagnetic heterostructure modulated by both the in-plane magnetic field and the δ -doping has been investigated in detail using the transfer-matrix method. The numerical results indicate that, in such a nonmagnetic device, one can obtain the considerable spin polarization which is dependent on the in-plane magnetic field and the δ -doping as well as the wave vector in the plane of the barrier. Thus, we can design the spintronic devices based on nonmagnetic heterostructures controlled by the in-plane magnetic field and the δ -doping as well as the wave vector.