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We present perfectly vertical grating couplers for the 220 nm silicon-on-insulator platform incorporating subwavelength metamaterials to increase the minimum feature sizes and achieve broadband low back-reflection. Our study reveals that devices with high coupling efficiencies are distributed over a wide region of the design space with varied back-reflections, while still maintaining minimum feature sizes larger than 100 nm and even 130 nm. Using 3D-finite-difference time-domain simulations, we demonstrate devices with broadband low back-reflection of less than − 20 d B over more than 100 nm bandwidth centered around the C-band. Coupling efficiencies of 72% and 67% are achieved for minimum feature sizes of 106 nm and 130 nm, respectively. These gratings are also more fabrication tolerant compared to similar designs not using metamaterials.

We propose a fiber-chip grating coupler that interleaves the standard full and shallow etch trenches in a 220 nm thick silicon layer to provide a directionality upward exceeding 95%. By adjusting the separation between the two sets of trenches, constructive interference is achieved in the upward direction independent of the bottom oxide thickness and without any bottom reflectors, overlays, or customized etch depths. We implement a transverse subwavelength structure in the first two grating periods to minimize back-reflections. The grating coupler has a calculated coupling efficiency of CE ~ -1.05 dB with a 1 dB bandwidth of 30 nm and minimum feature size of 100 nm, compatible with deep-UV lithography.

Grating couplers are widely used as an efficient and versatile fiber-chip coupling structure in nanometric silicon wire waveguides. The implementation of efficient grating couplers in micrometric silicon-on-insulator (SOI) rib waveguides is, however, challenging, since the coupler waveguide region is multimode. Here we experimentally demonstrate grating couplers in 1:5 ?m-thick SOI rib waveguides with a coupling efficiency of ?2:2 dB and a 3 dB bandwidth of 40nm. An inverse taper is used to adiabatically transform the interconnection waveguide mode to the optimum grating coupler excitation field with negligible higher order Bloch mode excitation. Couplers are fabricated in the same etch step as the waveguides using i-line stepper lithography. The benefits of wafer-scale testing and device characterization without facet preparation are thus attained at no additional cost. © 2011 Optical Society of America.