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Start Over Author "Zong Nan" Journal optics letters
19 results on '"Zong Nan"'

6. High-energy single-frequency 167 nm deep-ultraviolet laser

Author

Li, Jia-Jia, primary, Zhang, Feng-Feng, additional, Wang, Zhi-Min, additional, Xu, Yi-Chen, additional, Liu, Xu-Chao, additional, Zong, Nan, additional, Zhang, Shen-Jin, additional, Xu, Feng-Liang, additional, Yang, Feng, additional, Yuan, Lei, additional, Kou, Yang, additional, Bo, Yong, additional, Cui, Da-Fu, additional, Peng, Qin-Jun, additional, Wang, Xiao-Yang, additional, Liu, Li-Juan, additional, Chen, Chuang-Tian, additional, and Xu, Zu-Yan, additional

Published
2018
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8. 22.9??W CW single-frequency laser at 671??nm by frequency doubling of Nd:YVO_4 laser

Author

Zhang, Yi-Xuan, Wang, Zhi-Min, Zhou, Zi-Han, Zhang, Feng-Feng, Liu, Xu-Chao, Zong, Nan, Yong, Bo, and Peng, Qin-Jun

Abstract

A stable, 22.9 W, 671 nm single-frequency laser using a type II noncritically phase-matched external-cavity frequency doubling is demonstrated. The output power of the fundamental laser is 32.1 W; the corresponding conversion efficiency of frequency doubling from 1342 to 671 nm is calculated to be 71.3%. The M^2 factors are measured to be 1.10 and 1.08 in the x and y directions, respectively. To the best of our knowledge, 22.9 W is the highest power obtained for a 671 nm single-frequency laser.

Published
2020

9. High-power QCW microsecond-pulse solid-state sodium beacon laser with spiking suppression and D_2b re-pumping

Author

Bian, Qi, primary, Bo, Yong, additional, Zuo, Jun-wei, additional, Guo, Chuan, additional, Xu, Chang, additional, Tu, Wei, additional, Shen, Yu, additional, Zong, Nan, additional, Yuan, Lei, additional, Gao, Hong-wei, additional, Peng, Qin-jun, additional, Chen, Hong-bin, additional, Feng, Lu, additional, Jin, Kai, additional, Wei, Kai, additional, Cui, Da-fu, additional, Xue, Sui-jian, additional, Zhang, Yu-dong, additional, and Xu, Zu-yan, additional

Published
2016
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10. 16775-nm vacuum-ultraviolet ps laser by eighth-harmonic generation of a 1342-nm Nd:YVO_4 amplifier in KBBF

Author

Dai, Shi-Bo, primary, Zong, Nan, additional, Yang, Feng, additional, Zhang, Shen-Jin, additional, Wang, Zhi-Min, additional, Zhang, Feng-Feng, additional, Tu, Wei, additional, Shang, Lin-Qiao, additional, Liu, Li-Juan, additional, Wang, Xiao-Yang, additional, Zhang, Jing-Yuan, additional, Cui, Da-Fu, additional, Peng, Qin-Jun, additional, Li, Ru-Kang, additional, Chen, Chuang-Tian, additional, and Xu, Zu-Yan, additional

Published
2015
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11. Sub-pm linewidth nanosecond Nd:GYSGG laser at 13366 nm

Author

Li, Hui, primary, Wang, Zhi-min, additional, Zhang, Feng-feng, additional, Wang, Ming-qiang, additional, Li, Jia-jia, additional, Mao, Yu-lin, additional, Yuan, Lei, additional, Zong, Nan, additional, Zhang, Shen-jin, additional, Yang, Feng, additional, Bo, Yong, additional, Gao, Chun-qing, additional, Cui, Da-fu, additional, Peng, Qin-jun, additional, and Xu, Zu-yan, additional

Published
2015
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12. Comparison of laser induced thermal fracture between polycrystalline ceramic and crystal Nd:YAG

Author

Shen, Yu, primary, Liu, Wen-bin, additional, Zong, Nan, additional, Li, Jiang, additional, Bo, Yong, additional, Feng, Xi-qi, additional, Li, Fang-qin, additional, Pan, Yu-bai, additional, Guo, Ya-ding, additional, Wang, Peng-yuan, additional, Tu, Wei, additional, Peng, Qin-jun, additional, Zhang, Jing-yuan, additional, Lei, Wenqiang, additional, Cui, Da-fu, additional, and Xu, Zu-yan, additional

Published
2014
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13. High-power ultraviolet 278 nm laser from fourth-harmonic generation of a Nd:YAG laser in CsB_3O_5

Author

Wang, Zhichao, primary, Yang, Feng, additional, Zhang, Guochun, additional, Bo, Yong, additional, Liu, Shanshan, additional, Xie, Shiyong, additional, Xu, Yiting, additional, Zong, Nan, additional, Li, Fangqin, additional, Liu, Biaolong, additional, Xu, Jialin, additional, Peng, Qinjun, additional, Zhang, Jingyuan, additional, Cui, Dafu, additional, Wu, Yicheng, additional, and Xu, Zuyan, additional

Published
2012
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16. 1.9 µJ external-cavity dumped ultra-broad-area semiconductor nanosecond laser.

Author

Chen N, Wang XJ, Liu K, Zong N, Zhang AN, Zhang XM, and Peng QJ

Subjects
Heart Rate, Lasers, Semiconductor, Semiconductors
Abstract

An external-cavity dumped nanosecond (ns) ultra-broad-area laser diode (UBALD) at around 966 nm with high pulse energy is demonstrated. A 1 mm UBALD is used to produce high output power and high pulse energy. A Pockels cell (PC) combines with two polarization beam splitters (PBSs) and is employed to cavity-dump a UBALD operating at 10 kHz repetition rate. At a pump current of 23 A, 11.4 ns pulses with a maximum pulse energy of ≈1.9 µJ and a maximum peak power of ≈166 W are achieved. The beam quality factor is measured to be M x 2 =19.5 in the slow axis direction and M y 2 =2.17 in the fast axis direction. Moreover, maximum average output power stability is confirmed, with a power fluctuation of less than 0.8% rms over 60 min. To the best of our knowledge, this is the first high-energy external-cavity dumped demonstration from an UBALD.

Published
2023
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17. Excellent performance of a cryogenic Nd:YAlO 3 laser with low wavefront distortion based on zero thermal expansion.

Author

Song YJ, Xu YZ, Meng S, Jiang XX, Shao CF, Song ZX, Zong N, Wang ZM, Bo Y, Wang XJ, Lin ZS, and Peng QJ

Abstract

High-power solid-state lasers with good beam quality are attracting great attention on account of their important applications in industry and military. However, the thermal effects generated in the laser host materials seriously limit power scaling and degrade the beam quality. Thermal lensing and thermally induced wavefront deformation are the main causes of the beam quality deterioration. Here we investigate the performance of a zero thermal expansion (ZTE) solid-state laser gain material. In a proof-of-principle experiment, an ${a}$-cut rod ${\rm Nd}\!:\!{{\rm YAlO}_3}$ (Nd:YAP) perovskite crystal is chosen to be the gain medium for ZTE around 180 K. The laser performance spanning the temperature range from 80 to 290 K is studied. The maximum output power and minimum threshold pump power were obtained at a temperature of 180 K. Moreover, the measured thermal focal power and peak-to-valley value of the wavefront distortion also reach a minimum at this temperature, an additional benefit from the crystal's ZTE coefficient. We envisage that these results will open a new route towards the development of high-power and high-beam-quality lasers through the use of ZTE gain materials.

Published
2021
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18. 22.9  W CW single-frequency laser at 671  nm by frequency doubling of Nd:YVO 4 laser.

Author

Zhang YX, Wang ZM, Zhou ZH, Zhang FF, Liu XC, Zong N, Yong B, and Peng QJ

Abstract

A stable, 22.9 W, 671 nm single-frequency laser using a type II noncritically phase-matched external-cavity frequency doubling is demonstrated. The output power of the fundamental laser is 32.1 W; the corresponding conversion efficiency of frequency doubling from 1342 to 671 nm is calculated to be 71.3%. The M 2 factors are measured to be 1.10 and 1.08 in the x and y directions, respectively. To the best of our knowledge, 22.9 W is the highest power obtained for a 671 nm single-frequency laser.

Published
2020
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19. Tunable 7-12  μm picosecond optical parametric amplifier based on a LiInSe 2 mid-infrared crystal.

Author

Wang S, Dai S, Jia N, Zong N, Li C, Shen Y, Yu T, Qiao J, Gao Z, Peng Q, Xu Z, and Tao X

Abstract

Mid-infrared (MIR) nonlinear optical crystals of LiInSe 2 (LISe) were grown by a modified Bridgman technique on a (001)-seed. A 7-12 μm widely tunable picosecond (ps) MIR optical parametric amplifier (OPA) based on a LISe crystal was demonstrated for the first time, to the best of our knowledge. The MIR OPA was pumped by a 30 ps 1064 nm Nd:YAG laser and injected by a KTiOPO 4 (KTP)-based widely tunable near-infrared seed. The idler operating at 7.5 μm with the highest pulse energy of 170 μJ was obtained under a pump energy of 14 mJ. The corresponding energy conversion efficiency is ∼1.21%, and the photon conversion efficiency is 8.6%. The output energies were measured to be ∼121  μJ at 7 μm and ∼21  μJ at 12 μm.

Published
2017
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