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1.9 µJ external-cavity dumped ultra-broad-area semiconductor nanosecond laser.
- Source :
-
Optics letters [Opt Lett] 2023 Jul 01; Vol. 48 (13), pp. 3555-3558. - Publication Year :
- 2023
-
Abstract
- An external-cavity dumped nanosecond (ns) ultra-broad-area laser diode (UBALD) at around 966 nm with high pulse energy is demonstrated. A 1 mm UBALD is used to produce high output power and high pulse energy. A Pockels cell (PC) combines with two polarization beam splitters (PBSs) and is employed to cavity-dump a UBALD operating at 10 kHz repetition rate. At a pump current of 23 A, 11.4 ns pulses with a maximum pulse energy of ≈1.9 µJ and a maximum peak power of ≈166 W are achieved. The beam quality factor is measured to be M <subscript>x</subscript> <superscript>2</superscript> =19.5 in the slow axis direction and M <subscript>y</subscript> <superscript>2</superscript> =2.17 in the fast axis direction. Moreover, maximum average output power stability is confirmed, with a power fluctuation of less than 0.8% rms over 60 min. To the best of our knowledge, this is the first high-energy external-cavity dumped demonstration from an UBALD.
- Subjects :
- Heart Rate
Lasers, Semiconductor
Semiconductors
Subjects
Details
- Language :
- English
- ISSN :
- 1539-4794
- Volume :
- 48
- Issue :
- 13
- Database :
- MEDLINE
- Journal :
- Optics letters
- Publication Type :
- Academic Journal
- Accession number :
- 37390179
- Full Text :
- https://doi.org/10.1364/OL.492453