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In this Letter, a record modulation bandwidth of 1.31 GHz was achieved by a 10 µm c-plane green micro light emitting diode (micro-LED) at a current density of 41.4 kA/cm 2 . Furthermore, by designing a series-biased 20 µm micro-LED with higher light output power, combined with an orthogonal frequency division multiplexing modulation scheme, a maximum data rate of 5.789 Gbps was achieved at a free-space transmission distance of 0.5 m. This work demonstrates the prospect of c-plane polar green micro-LED in ultrahigh-speed visible light communication, which is expected to realize a high-performance wireless system in the future.

The ${{\rm MoO}_{\rm x}}/{\rm Al}$MoO x /Al electrode was designed and fabricated on p-GaN and sapphire with good ohmic behavior and decent deep ultraviolet (DUV) reflectivity, respectively. The influences of ${{\rm MoO}_{\rm x}}$MoO x thickness and annealing condition on the electrical and optical behaviors of the ${{\rm MoO}_{\rm x}}/{\rm Al}$MoO x /Al structure were investigated. Surface morphology of ${{\rm MoO}_{\rm x}}$MoO x with different thicknesses reveals a 3D growth mode. Partial decomposition of ${{\rm MoO}_{\rm x}}$MoO x was discovered, which helps in the formation of ohmic contact between ${{\rm MoO}_{\rm x}}$MoO x and Al. The potential for application in deep ultraviolet light-emitting-diodes (DUV-LEDs) has also been demonstrated.