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Demonstration of ohmic contact using ${{\rm MoO}_{\rm x}}/{\rm Al}$MoO_x/Al on p-GaN and the proposal of a reflective electrode for AlGaN-based DUV-LEDs
- Source :
- Optics Letters; April 2020, Vol. 45 Issue: 8 p2427-2430, 4p
- Publication Year :
- 2020
-
Abstract
- The ${{\rm MoO}_{\rm x}}/{\rm Al}$MoO_x/Al electrode was designed and fabricated on p-GaN and sapphire with good ohmic behavior and decent deep ultraviolet (DUV) reflectivity, respectively. The influences of ${{\rm MoO}_{\rm x}}$MoO_x thickness and annealing condition on the electrical and optical behaviors of the ${{\rm MoO}_{\rm x}}/{\rm Al}$MoO_x/Al structure were investigated. Surface morphology of ${{\rm MoO}_{\rm x}}$MoO_x with different thicknesses reveals a 3D growth mode. Partial decomposition of ${{\rm MoO}_{\rm x}}$MoO_x was discovered, which helps in the formation of ohmic contact between ${{\rm MoO}_{\rm x}}$MoO_x and Al. The potential for application in deep ultraviolet light-emitting-diodes (DUV-LEDs) has also been demonstrated.
Details
- Language :
- English
- ISSN :
- 01469592 and 15394794
- Volume :
- 45
- Issue :
- 8
- Database :
- Supplemental Index
- Journal :
- Optics Letters
- Publication Type :
- Periodical
- Accession number :
- ejs52913493