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Mid-IR is a useful wavelength range for both science and military applications due to its low atmospheric attenuation and ability to be used for passive detection. However, many solutions for detecting light in this spectral region need to be operated at cryogenic temperatures as their required narrow bandgaps suffer from carrier recombination and band-to-band tunneling at room temperature leading to high dark currents. These problems can be alleviated by using a separate absorption, charge, and multiplication avalanche photodiode. We have recently demonstrated such a device with a 3-µm cutoff using Al

We report the frequency response of Al0.3InAsSb/Al0.7InAsSb nBn photodetectors. The 3-dB bandwidth of the devices varies from ∼ 150 MHz to ∼ 700 MHz with different device diameters and saturates with bias voltage immediately after the device turn on. A new equivalent circuit model is developed to explain the frequency behavior of nBn photodetectors. The simulated bandwidth based on the new equivalent circuit model agrees well with the bandwidth and the microwave scattering parameter measurements. The analysis reveals that the limiting factor of the bandwidth of the nBn photodetector is the large diffusion capacitance caused by the minority carrier lifetime and the device area. Additionally, the bandwidth of the nBn photodetector is barely affected by the photocurrent, which is found to be caused by the barrier structure in the nBn photodetector.

We investigate the room-temperature bandwidth performance of AlInAsSb avalanche photodiodes under 2-μm illumination. Parameter characterization denotes RC-limited performance. While measurements indicate a maximum gain-bandwidth product of 44 GHz for a 60-μm-diameter device, we scale this performance to smaller device sizes based on the RC response. For a 15-μm-diameter device, we predict a maximum gain-bandwidth product of approximately 144 GHz based on the reported measurements.

Mid-IR is a useful wavelength range for both science and military applications due to its low atmospheric attenuation and ability to be used for passive detection. However, many solutions for detecting light in this spectral region need to be operated at cryogenic temperatures as their required narrow bandgaps suffer from carrier recombination and band-to-band tunneling at room temperature leading to high dark currents. These problems can be alleviated by using a separate absorption, charge, and multiplication avalanche photodiode. We have recently demonstrated such a device with a 3-µm cutoff using Al0.15In0.85As0.77Sb0.23, as the absorber, grown on GaSb. Here we investigate Al0.15In0.85As0.77Sb0.23 as a simple PIN homojunction and provide metrics to aid in future designs using this material. PL spectrum measurements indicate a bandgap of 2.94 µm at 300 K. External quantum efficiencies of 39% and 33% are achieved at 1.55 µm and 2 µm respectively. Between 180 K and 280 K the activation energy is ∼0.22 eV, roughly half the bandgap of Al0.15In0.85As0.77Sb0.23, indicating thermal generation is dominant.

In this letter, we report optical pump terahertz (THz) near-field probe (n-OPTP) and optical pump THz near-field emission (n-OPTE) experiments of graphene/InAs heterostructures. Near-field imaging contrasts between graphene and InAs using these newly developed techniques as well as spectrally integrated THz nano-imaging (THz s-SNOM) are systematically studied. We demonstrate that in the near-field regime (λ/6000), a single layer of graphene is transparent to near-IR (800 nm) optical excitation and completely "screens" the photo-induced far-infrared (THz) dynamics in its substrate (InAs). Our work reveals unique frequency-selective ultrafast dynamics probed at the near field. It also provides strong evidence that n-OPTE nanoscopy yields contrast that distinguishes single-layer graphene from its substrate.

We report Al

Photomixers at THz frequencies offer an attractive solution to fill the THz gap; however, conventional photomixer designs result in low output powers, on the order of microwatts, before thermal failure. We propose an alternative photomixer design capable of orders of magnitude enhancement of continuous-wave THz generation using a metamaterial approach. By forming a metal-semiconductor-metal (MSM) cavity through layering an ultrafast semiconductor material between subwavelength metal-dielectric gratings, tailored resonance can achieve ultrathin absorbing regions and efficient heat sinking. When mounted to a tunable E-patch antenna, gratings also act as vertically biased electrodes, further enhancing photoconductive gain by reducing the carrier path length to nanoscales. Thus, through these multiplicative enhancements, the metamaterial-enhanced photomixer is projected to generate THz powers in the milliwatt range and exceed the Manley-Rowe limit for frequencies less than 2 THz.

We report AlxIn1-xAsySb1-y PIN and Separate Absorption, Charge and Multiplication (SACM) avalanche photodiodes (APDs) with high temperature stability. This work is based on measurements of avalanche breakdown voltage of these devices for temperatures between 223 K and 363 K. Breakdown voltage temperature coefficients are shown to be lower than those of APDs fabricated with other materials with comparable multiplication layer thicknesses.

We present a comprehensive analysis of terahertz radiation from large area plasmonic photoconductive emitters in relation with characteristics of device substrate. Specifically, we investigate the radiation properties of large area plasmonic photoconductive emitters fabricated on GaAs substrates that exhibit short carrier lifetimes through low-temperature substrate growth and through epitaxially embedded rare-earth arsenide (ErAs and LuAs) nanoparticles in superlattice structures. Our analysis indicates that the utilized substrate composition and growth process for achieving short carrier lifetimes are crucial in determining substrate resistivity, carrier drift velocity, and carrier lifetime, which directly impact optical-to-terahertz conversion efficiency, radiation power, radiation bandwidth, and reliability of large area plasmonic photoconductive emitters.