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Cesium lead bromide (CsPbBr 3 , CPB) powder formed by micro-, nanocrystals (MC, NC) and quantum dots (QD) was synthesized as free-standing and polystyrene covered. Luminescence was multicomponent, in general, ranging from below 1.9 eV up to about 2.6 eV. The ultrafast decay kinetics exhibited strong decay time component with the value of 260 ps. Electron paramagnetic resonance (EPR) revealed surface defects like O 2 − and some spin transitions most likely originating from some complex defect, supposedly F-V k (H) dimer center under the constant ultraviolet (UV) light irradiation at the temperature T = 10 K. The thermal release of the electrons from the O 2 − center was correlated with the 117 K thermally stimulated luminescence (TSL) peak. Coating with polystyrene resulted in the about doubly increased decay time of luminescence. The O 2 − and F-V k (H) EPR resonances were not observed as well. The TSL peak which might be ascribed to the O 2 − was not clearly detected anymore. The glow curve was composed of one very broad peak typical for the amorphous materials. At the same time, the polystyrene prevented the MCs creation. The existence of charge/energy transfer between the CPB and polystyrene due to the chemical bonding was assumed and confirmed also by calculations. [Display omitted] • EPR, TSL and RL study of charge trapping and luminescence in CsPbBr 3. • Charge/energy transfer was detected. • O 2 − -related electron trapping center was revealed in these crystals. • TSL peak was correlated to the release of electrons from the O 2 − surface center. • Complex bromine vacancy-related charge trapping center was observed. [ABSTRACT FROM AUTHOR]

Ce-doped lutetium aluminum garnet Lu 3 Al 5 O 12 (LuAG) nanoceramics were fabricated at 1600 °C and 1700 °C by spark-plasma sintering (SPS) method from nano-powders prepared by radiation synthesis. Both undoped and Ce-doped LuAG ceramic samples were also prepared from the nano-powders at 1700 °C with significantly increased pre-heating rate. The backscattered electron images revealed large amount of pores in all the Ce-doped samples causing their significant opacity. On the other hand, very large grains and no pores were revealed in the undoped sample, which was the only transparent one. The radioluminescence measurements revealed superior overall scintillation efficiency of the samples sintered at the temperature 1700 °C, and their defect emission in the UV region was ascribed to oxygen-vacancy-related defects such as F + centers. The photoluminescence decay of the defect emission was characterized by an extremely fast decay time of a few nanoseconds. Influence of sintering procedure and subsequent annealing on the luminescence and scintillation properties is discussed. [ABSTRACT FROM AUTHOR]

Luminescence and scintillation properties of Lu 2 YAl 2.5 Ga 2.5 O 12 :Ce,Mg (0.02, 0.05 %) garnet crystals grown by the micro-pulling down method were investigated. The onset temperature for luminescence quenching at ∼365 K is determined from the temperature dependence of photoluminescence decay time. At room temperature, the Mg (0.05 %) sample exhibits high integral scintillation efficiency of ∼445 % of BGO crystal, light yield value of 23,500 photons/MeV, and fast scintillation decay times of 20 ns (15 %) + 54 ns (85 %). The higher radioluminescence intensity of the Mg (0.05 %) sample correlates with an appearance of its lower themally-stimulated luminescence intensity in 77–500 K range. • Luminescence and scintillation properties of Lu 2 YAl 2.5 Ga 2.5 O 12 :Ce,Mg (Mg = 0.02 %, 0.05 %) crystals are investigated. • Both crystals show onset of luminescence quenching at 365 K. • Lu 2 YAl 2.5 Ga 2.5 O 12 :Ce,0.05%Mg shows light yield of 23,500 photons/MeV. • Lu 2 YAl 2.5 Ga 2.5 O 12 :Ce,0.05%Mg shows scintillation decay time of 20 ns (14 %) + 54 ns (86 %). • Thermoluminescence characteristics are investigated. [ABSTRACT FROM AUTHOR]

The scintillation characteristics of Gd 3 Al 2 Ga 3 O 12 :Ce, Li (GAGG:Ce,Li) and Gd 3 Al 2 Ga 3 O 12 :Ce, Mg (GAGG:Ce,Mg) single crystals were compared. Radioluminescence spectra and photoluminescence decay curves were measured at various temperatures between 77 and 500 K to investigate the thermal luminescence quenching. At 662 keV γ rays, the LY value of 35,400 photons/MeV and energy resolution of 6.9% obtained for GAGG:Ce, Li are superior to those of 24,200 photons/MeV and 9.5% for GAGG:Ce,Mg. Scintillation decays are approximated by a double exponentials with a fast principal decay component of 47 ns (83%) for GAGG:Ce, Mg and 90 ns (86%) for GAGG:Ce,Li. Coincidence time resolution of 282 ps obtained for GAGG:Ce, Mg is better than that of 389 ps for GAGG:Ce,Li. GAGG:Ce, Mg shows a much lower afterglow and thermally stimulated luminescence intensity with respect to GAGG:Ce,Li. • Scintillation properties of Li+ and Mg2+ -codoped Gd 3 Al 2 Ga 3 O 12 :Ce are compared. • Gd 3 Al 2 Ga 3 O 12 :Ce, Mg exhibits better timing performance. • Gd 3 Al 2 Ga 3 O 12 :Ce, Mg shows lower afterglow and TSL intensity. • Gd 3 Al 2 Ga 3 O 12 :Ce, Li exhibits high light yield and good energy resolution. [ABSTRACT FROM AUTHOR]

Optical and scintillation characteristics of Mg2+-codoped Lu 2 Y(Al 5-x Ga x)O 12 :Ce (x = 2, 3) multicomponent garnet crystals grown by the micro-pulling down method were investigated. At RT, the shortening of scintillation decay time and a decrease of light yield (LY) value measured for a higher Ga containing samples can be explained by thermal ionization of the Ce3+ 5d 1 excited state. At 662 keV γ-rays, Lu 2 YAl 3 Ga 2 O 12 : Ce, 0.05%Mg exhibits high LY value of 29,000 ph/MeV along with scintillation decay times of 50 ns (86%) + 73 ns (14%). Co-doping with larger Mg2+ content leads to a decrease of LY value, scintillation decay time, and afterglow level. Radioluminescence quenching observed at low temperature region in correlation with large thermoluminescence peaks can be caused by trapping of electrons at intrinsic shallow traps. • Luminescence and scintillation properties of Lu 2 Y(Al 5-x Ga x)O 12 :Ce,Mg (x = 2, 3) crystals are investigated. • Temperature dependencies of photo-and radioluminescence are presented. • Lu 2 YAl 3 Ga 2 O 12 :Ce,0.05%Mg shows high light yield of 29,000 photons/MeV. • Lu 2 YAl 3 Ga 2 O 12 :Ce,0.05%Mg shows quenching temperature at 435 K due to thermal ionization. • Afterglow and thermoluminescence characteristics are investigated. [ABSTRACT FROM AUTHOR]

Mg2+-codoped Y 0.6 Gd 2.4 Al 2 Ga 3 O 12 :Ce (YGAGG:Ce,Mg) single crystal was grown by the Czochralski method and its luminescence and scintillation properties were investigated. Temperature dependence of radioluminescence (RL) yield and photoluminescence (PL) decay time was measured, and activation energy of thermal ionization process was determined from temperature-dependent PL decay time measurement. YGAGG:Ce,Mg exhibited high X-ray excited RL yield almost 5 times higher than BGO reference scintillator. Its light yield of 41,500 ph/MeV and scintillation decay times of 12 ns (2%) + 52 ns (65%) + 207 ns (33%) were measured under excitation with 662 keV γ rays from 137Cs source. Afterglow and thermally stimulated luminescence characteristics are also investigated. • Luminescence and scintillation properties of Y 0.6 Gd 2.4 Al 2 Ga 3 O 12 :Ce,Mg crystal are investigated. • Temperature dependence of photo-and radioluminescence are presented. • Y 0.6 Gd 2.4 Al 2 Ga 3 O 12 :Ce,Mg shows high light yield of 41,500 photons/MeV. • Luminescence quenching above RT can be caused by thermal ionization. • Afterglow and thermoluminescence characteristics are investigated. [ABSTRACT FROM AUTHOR]

Luminescence and scintillation characteristics of Mg2+-codoped (Lu x Gd 3-x)Al 2.4 Ga 2.6 O 12 :Ce (x = 0.2–0.8) garnet crystals grown by the micro-pulling down method are investigated. The Ce3+ 5d 1 → 4f luminescence is blue-shifted with increasing Lu content due to the decrease in crystal field splitting of the 5 d levels. With increasing Lu content, the shortening of scintillation decay time accompanied with a decrease of LY value as measured at room temperature can be explained by thermal ionization of the Ce3+ 5d 1 excited state. Co-doping with Mg2+ results in the shortening of scintillation decay time, the reduction of LY value and afterglow intensity. At low temperature the radioluminescence quenching is observed in correlation with large thermoluminescence peaks, which can be attributed to the localization of electrons at intrinsic shallow traps. • Luminescence and scintillation of (Lu,Gd) 3 Al 2.4 Ga 2.6 O 12 :Ce, Mg crystals are investigated. • Temperature dependence of photo-and radioluminescence are presented. • Luminescence quenching above RT can be caused by thermal ionization. • Afterglow and low-temperature TL characteristics are investigated. [ABSTRACT FROM AUTHOR]