Search

Low-dimensional hybrid perovskites have demonstrated excellent performance as white-light emitters. The broadband white emission originates from self-trapped excitons (STEs). Since the mechanism of STEs formation in perovskites is still not clear, preparing new low-dimensional white perovskites relies mostly on screening lots of intercalated organic molecules rather than rational design. Here, we report an atom-substituting strategy to trigger STEs formation in layered perovskites. Halogen-substituted phenyl molecules are applied to synthesize perovskite crystals. The halogen-substituents will withdraw electrons from the branched chain (-R-NH3+) of the phenyl molecule. This will result in positive charge accumulation on -R-NH3+, and thus stronger Coulomb force of bond (-R-NH3+)-(PbBr42−), which facilitates excitons self-trapping. Our designed white perovskites exhibit photoluminescence quantum yield of 32%, color-rendering index of near 90 and chromaticity coordinates close to standard white-light. Our joint experiment-theory study provides insights into the STEs formation in perovskites and will benefit tailoring white perovskites with boosting performance., Broad-band emission of self-trapped exciton in low-dimensional perovskite is prospective for white LED, yet rational design new white perovskite remains challenge. Here, the authors develop an atom-substituting strategy to trigger exciton self-tapping in perovskites and reveal the mechanism behind.

Transition metal dichalcogenides have valley degree of freedom, which features optical selection rule and spin-valley locking, making them promising for valleytronics devices and quantum computation. For either application, a long valley polarization lifetime is crucial. Previous results showed that it is around picosecond in monolayer excitons, nanosecond for local excitons and tens of nanosecond for interlayer excitons. Here we show that the dark excitons in two-dimensional heterostructures provide a microsecond valley polarization memory thanks to the magnetic field induced suppression of valley mixing. The lifetime of the dark excitons shows magnetic field and temperature dependence. The long lifetime and valley polarization lifetime of the dark exciton in two-dimensional heterostructures make them promising for long-distance exciton transport and macroscopic quantum state generations., Owing to their valley degree of freedom, atomically thin transition metal dichalcogenides show promise for valleytronics. Here, the authors leverage the dark excitons of two-dimensional van der Waals heterostructures to demonstrate a microsecond valley polarization memory effect.

Graphene/hexagonal boron nitride (h-BN) vertical heterostructures have recently revealed unusual physical properties and new phenomena, such as commensurate-incommensurate transition and fractional quantum hall states featured with Hofstadter's butterfly. Graphene-based devices on h-BN substrate also exhibit high performance owing to the atomically flat surface of h-BN and its lack of charged impurities. To have a clean interface between the graphene and h-BN for better device performance, direct growth of large-area graphene/h-BN heterostructures is of great importance. Here we report the direct growth of large-area graphene/h-BN vertical heterostructures by a co-segregation method. By one-step annealing sandwiched growth substrates (Ni(C)/(B, N)-source/Ni) in vacuum, wafer-scale graphene/h-BN films can be directly formed on the metal surface. The as-grown vertically stacked graphene/h-BN structures are demonstrated by various morphology and spectroscopic characterizations. This co-segregation approach opens up a new pathway for large-batch production of graphene/h-BN heterostructures and would also be extended to the synthesis of other van der Waals heterostructures.