14 results on '"Qingsheng Zeng"'
Search Results
2. Phase-controllable growth of ultrathin 2D magnetic FeTe crystals
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Lixing Kang, Chen Ye, Xiaoxu Zhao, Xieyu Zhou, Junxiong Hu, Qiao Li, Dan Liu, Chandreyee Manas Das, Jiefu Yang, Dianyi Hu, Jieqiong Chen, Xun Cao, Yong Zhang, Manzhang Xu, Jun Di, Dan Tian, Pin Song, Govindan Kutty, Qingsheng Zeng, Qundong Fu, Ya Deng, Jiadong Zhou, Ariando Ariando, Feng Miao, Guo Hong, Yizhong Huang, Stephen J. Pennycook, Ken-Tye Yong, Wei Ji, Xiao Renshaw Wang, and Zheng Liu
- Subjects
Science - Abstract
Two-dimensional magnets with intrinsic ferromagnetic/antiferromagnetic ordering are highly desirable for future spintronic devices. Here, the authors demonstrate a chemical vapor deposition approach to controllably grow ultrathin FeTe crystals with antiferromagnetic tetragonal and ferromagnetic hexagonal phase, showing a thickness-dependent magnetic transition.
- Published
- 2020
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3. Strain-driven growth of ultra-long two-dimensional nano-channels
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Chao Zhu, Maolin Yu, Jiadong Zhou, Yongmin He, Qingsheng Zeng, Ya Deng, Shasha Guo, Mingquan Xu, Jinan Shi, Wu Zhou, Litao Sun, Lin Wang, Zhili Hu, Zhuhua Zhang, Wanlin Guo, and Zheng Liu
- Subjects
Science - Abstract
Controlled growth of heterostructures within 10 nm scale is crucial for potential applications of transition metal dichalcogenides. Here, the authors report strain-driven synthesis of ultra-long MoS2 nano-channels having several micrometers length and 2–30 nm width embedded within MoSe2 monolayer.
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- 2020
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4. Engineering grain boundaries at the 2D limit for the hydrogen evolution reaction
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Yongmin He, Pengyi Tang, Zhili Hu, Qiyuan He, Chao Zhu, Luqing Wang, Qingsheng Zeng, Prafful Golani, Guanhui Gao, Wei Fu, Zhiqi Huang, Caitian Gao, Juan Xia, Xingli Wang, Xuewen Wang, Quentin M. Ramasse, Ao Zhang, Boxing An, Yongzhe Zhang, Sara Martí-Sánchez, Joan Ramon Morante, Liang Wang, Beng Kang Tay, Boris I. Yakobson, Achim Trampert, Hua Zhang, Minghong Wu, Qi Jie Wang, Jordi Arbiol, and Zheng Liu
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Science - Abstract
Abstract Atom-thin transition metal dichalcogenides (TMDs) have emerged as fascinating materials and key structures for electrocatalysis. So far, their edges, dopant heteroatoms and defects have been intensively explored as active sites for the hydrogen evolution reaction (HER) to split water. However, grain boundaries (GBs), a key type of defects in TMDs, have been overlooked due to their low density and large structural variations. Here, we demonstrate the synthesis of wafer-size atom-thin TMD films with an ultra-high-density of GBs, up to ~1012 cm−2. We propose a climb and drive 0D/2D interaction to explain the underlying growth mechanism. The electrocatalytic activity of the nanograin film is comprehensively examined by micro-electrochemical measurements, showing an excellent hydrogen-evolution performance (onset potential: −25 mV and Tafel slope: 54 mV dec−1), thus indicating an intrinsically high activation of the TMD GBs.
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- 2020
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5. Van der Waals negative capacitance transistors
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Xiaowei Wang, Peng Yu, Zhendong Lei, Chao Zhu, Xun Cao, Fucai Liu, Lu You, Qingsheng Zeng, Ya Deng, Jiadong Zhou, Qundong Fu, Junling Wang, Yizhong Huang, and Zheng Liu
- Subjects
Science - Abstract
The adaptation to atomically thin 2D semiconductors and van der Waals layered ferroelectrics can enable negative capacitance transistors with superior performance and bendability. Here, the authors report flexible negative capacitance transistors based on MoS2 and a ferroelectric dielectric CIPS with a minimum sub-threshold slope of 28 mV/dec and high gain logic invertors.
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- 2019
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6. Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor
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Xuechao Yu, Peng Yu, Di Wu, Bahadur Singh, Qingsheng Zeng, Hsin Lin, Wu Zhou, Junhao Lin, Kazu Suenaga, Zheng Liu, and Qi Jie Wang
- Subjects
Science - Abstract
The mid-infrared technologies are essential to various applications but suffer from limited materials with suitable bandgap. Here the authors demonstrate that two-dimensional atomically thin PtSe2 with variable bandgaps in the mid-infrared via layer and defect engineering is highly promising for mid-infrared optoelectronics.
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- 2018
- Full Text
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7. Author Correction: Van der Waals engineering of ferroelectric heterostructures for long-retention memory
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Xiaowei Wang, Chao Zhu, Ya Deng, Ruihuan Duan, Jieqiong Chen, Qingsheng Zeng, Jiadong Zhou, Qundong Fu, Lu You, Song Liu, James H. Edgar, Peng Yu, and Zheng Liu
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Science - Published
- 2021
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8. High-quality monolayer superconductor NbSe2 grown by chemical vapour deposition
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Hong Wang, Xiangwei Huang, Junhao Lin, Jian Cui, Yu Chen, Chao Zhu, Fucai Liu, Qingsheng Zeng, Jiadong Zhou, Peng Yu, Xuewen Wang, Haiyong He, Siu Hon Tsang, Weibo Gao, Kazu Suenaga, Fengcai Ma, Changli Yang, Li Lu, Ting Yu, Edwin Hang Tong Teo, Guangtong Liu, and Zheng Liu
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Science - Abstract
Two-dimensional superconductors will likely have applications not only in devices, but also in the study of fundamental physics. Here, Wang et al. demonstrate the CVD growth of superconducting NbSe2 on a variety of substrates, making these novel materials increasingly accessible.
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- 2017
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9. Author Correction: Van der Waals engineering of ferroelectric heterostructures for long-retention memory
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Jieqiong Chen, James H. Edgar, Qundong Fu, Chao Zhu, Song Liu, Ruihuan Duan, Qingsheng Zeng, Ya Deng, Xiaowei Wang, Peng Yu, Zheng Liu, Jiadong Zhou, and Lu You
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Information storage ,Multidisciplinary ,Materials science ,Condensed matter physics ,Science ,General Physics and Astronomy ,Heterojunction ,General Chemistry ,Two-dimensional materials ,Ferroelectricity ,General Biochemistry, Genetics and Molecular Biology ,symbols.namesake ,Electronic devices ,symbols ,Retention memory ,van der Waals force ,Author Correction - Abstract
The limited memory retention for a ferroelectric field-effect transistor has prevented the commercialization of its nonvolatile memory potential using the commercially available ferroelectrics. Here, we show a long-retention ferroelectric transistor memory cell featuring a metal-ferroelectric-metal-insulator-semiconductor architecture built from all van der Waals single crystals. Our device exhibits 17 mV dec
- Published
- 2021
10. Van der Waals negative capacitance transistors
- Author
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Xun Cao, Lu You, Xiaowei Wang, Chao Zhu, Qundong Fu, Ya Deng, Junling Wang, Fucai Liu, Zhendong Lei, Yizhong Huang, Qingsheng Zeng, Zheng Liu, Jiadong Zhou, Peng Yu, School of Electrical and Electronic Engineering, School of Materials Science & Engineering, CINTRA CNRS/NTU/Thales, Centre for Micro-/Nano-electronics (NOVITAS), Environmental Chemistry and Materials Centre, Nanyang Environment and Water Research Institute, and Research Techno Plaza
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Materials science ,Science ,General Physics and Astronomy ,Thermionic emission ,Dielectric ,Two-dimensional materials ,General Biochemistry, Genetics and Molecular Biology ,Article ,law.invention ,symbols.namesake ,law ,Electronic devices ,lcsh:Science ,Multidisciplinary ,Two-dimensional Materials ,business.industry ,Transistor ,Heterojunction ,General Chemistry ,Electronic Devices ,Boltzmann distribution ,Semiconductor ,symbols ,Electrical and electronic engineering [Engineering] ,Optoelectronics ,lcsh:Q ,van der Waals force ,business ,Negative impedance converter - Abstract
The Boltzmann distribution of electrons sets a fundamental barrier to lowering energy consumption in metal-oxide-semiconductor field-effect transistors (MOSFETs). Negative capacitance FET (NC-FET), as an emerging FET architecture, is promising to overcome this thermionic limit and build ultra-low-power consuming electronics. Here, we demonstrate steep-slope NC-FETs based on two-dimensional molybdenum disulfide and CuInP2S6 (CIPS) van der Waals (vdW) heterostructure. The vdW NC-FET provides an average subthreshold swing (SS) less than the Boltzmann’s limit for over seven decades of drain current, with a minimum SS of 28 mV dec−1. Negligible hysteresis is achieved in NC-FETs with the thickness of CIPS less than 20 nm. A voltage gain of 24 is measured for vdW NC-FET logic inverter. Flexible vdW NC-FET is further demonstrated with sub-60 mV dec−1 switching characteristics under the bending radius down to 3.8 mm. These results demonstrate the great potential of vdW NC-FET for ultra-low-power and flexible applications., The adaptation to atomically thin 2D semiconductors and van der Waals layered ferroelectrics can enable negative capacitance transistors with superior performance and bendability. Here, the authors report flexible negative capacitance transistors based on MoS2 and a ferroelectric dielectric CIPS with a minimum sub-threshold slope of 28 mV/dec and high gain logic invertors.
- Published
- 2019
11. Strain-driven growth of ultra-long two-dimensional nano-channels
- Author
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Zhuhua Zhang, Wanlin Guo, Zheng Liu, Jinan Shi, Chao Zhu, Jiadong Zhou, Mingquan Xu, Wu Zhou, Litao Sun, Lin Wang, Qingsheng Zeng, Ya Deng, Maolin Yu, Zhili Hu, Yongmin He, and Shasha Guo
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Materials science ,Science ,General Physics and Astronomy ,02 engineering and technology ,010402 general chemistry ,01 natural sciences ,Article ,General Biochemistry, Genetics and Molecular Biology ,Topological defect ,Micrometre ,Transition metal ,Nano ,Monolayer ,lcsh:Science ,Microscopy ,Nanoscale materials ,Multidisciplinary ,business.industry ,Heterojunction ,General Chemistry ,021001 nanoscience & nanotechnology ,0104 chemical sciences ,Optoelectronics ,lcsh:Q ,Grain boundary ,Nanometre ,0210 nano-technology ,business - Abstract
Lateral heterostructures of two-dimensional transition metal dichalcogenides (TMDs) have offered great opportunities in the engineering of monolayer electronics, catalysis and optoelectronics. To explore the full potential of these materials, developing methods to precisely control the spatial scale of the heterostructure region is crucial. Here, we report the synthesis of ultra-long MoS2 nano-channels with several micrometer length and 2–30 nanometer width within the MoSe2 monolayers, based on intrinsic grain boundaries (GBs). First-principles calculations disclose that the strain fields near the GBs not only lead to the preferred substitution of selenium by sulfur but also drive coherent extension of the MoS2 channel from the GBs. Such a strain-driven synthesis mechanism is further shown applicable to other topological defects. We also demonstrate that the spontaneous strain of MoS2 nano-channels can further improve the hydrogen production activity of GBs, paving the way for designing GB based high-efficient TMDs in the catalytic application., Controlled growth of heterostructures within 10 nm scale is crucial for potential applications of transition metal dichalcogenides. Here, the authors report strain-driven synthesis of ultra-long MoS2 nano-channels having several micrometers length and 2–30 nm width embedded within MoSe2 monolayer.
- Published
- 2020
12. Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor
- Author
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Qi Jie Wang, Wu Zhou, Zheng Liu, Xuechao Yu, Peng Yu, Junhao Lin, Bahadur Singh, Di Wu, Hsin Lin, Qingsheng Zeng, Kazu Suenaga, School of Electrical and Electronic Engineering, School of Materials Science & Engineering, Centre for OptoElectronics and Biophotonics, Centre for Programmable Materials, and Nanoelectronics Centre of Excellence
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Materials science ,Band gap ,Science ,Optoelectronic Device ,Superlattice ,General Physics and Astronomy ,02 engineering and technology ,engineering.material ,010402 general chemistry ,01 natural sciences ,Article ,General Biochemistry, Genetics and Molecular Biology ,chemistry.chemical_compound ,Night vision ,Mercury cadmium telluride ,lcsh:Science ,Multidisciplinary ,business.industry ,Indium antimonide ,Wide-bandgap semiconductor ,General Chemistry ,021001 nanoscience & nanotechnology ,0104 chemical sciences ,Semiconductor ,chemistry ,engineering ,Optoelectronics ,lcsh:Q ,Noble metal ,0210 nano-technology ,business ,Mid-infrared Semiconductor - Abstract
The interest in mid-infrared technologies surrounds plenty of important optoelectronic applications ranging from optical communications, biomedical imaging to night vision cameras, and so on. Although narrow bandgap semiconductors, such as Mercury Cadmium Telluride and Indium Antimonide, and quantum superlattices based on inter-subband transitions in wide bandgap semiconductors, have been employed for mid-infrared applications, it remains a daunting challenge to search for other materials that possess suitable bandgaps in this wavelength range. Here, we demonstrate experimentally for the first time that two-dimensional (2D) atomically thin PtSe2 has a variable bandgap in the mid-infrared via layer and defect engineering. Here, we show that bilayer PtSe2 combined with defects modulation possesses strong light absorption in the mid-infrared region, and we realize a mid-infrared photoconductive detector operating in a broadband mid-infrared range. Our results pave the way for atomically thin 2D noble metal dichalcogenides to be employed in high-performance mid-infrared optoelectronic devices., The mid-infrared technologies are essential to various applications but suffer from limited materials with suitable bandgap. Here the authors demonstrate that two-dimensional atomically thin PtSe2 with variable bandgaps in the mid-infrared via layer and defect engineering is highly promising for mid-infrared optoelectronics.
- Published
- 2018
13. High-quality monolayer superconductor NbSe
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Hong, Wang, Xiangwei, Huang, Junhao, Lin, Jian, Cui, Yu, Chen, Chao, Zhu, Fucai, Liu, Qingsheng, Zeng, Jiadong, Zhou, Peng, Yu, Xuewen, Wang, Haiyong, He, Siu Hon, Tsang, Weibo, Gao, Kazu, Suenaga, Fengcai, Ma, Changli, Yang, Li, Lu, Ting, Yu, Edwin Hang Tong, Teo, Guangtong, Liu, and Zheng, Liu
- Subjects
Article - Abstract
The discovery of monolayer superconductors bears consequences for both fundamental physics and device applications. Currently, the growth of superconducting monolayers can only occur under ultrahigh vacuum and on specific lattice-matched or dangling bond-free substrates, to minimize environment- and substrate-induced disorders/defects. Such severe growth requirements limit the exploration of novel two-dimensional superconductivity and related nanodevices. Here we demonstrate the experimental realization of superconductivity in a chemical vapour deposition grown monolayer material—NbSe2. Atomic-resolution scanning transmission electron microscope imaging reveals the atomic structure of the intrinsic point defects and grain boundaries in monolayer NbSe2, and confirms the low defect concentration in our high-quality film, which is the key to two-dimensional superconductivity. By using monolayer chemical vapour deposited graphene as a protective capping layer, thickness-dependent superconducting properties are observed in as-grown NbSe2 with a transition temperature increasing from 1.0 K in monolayer to 4.56 K in 10-layer., Two-dimensional superconductors will likely have applications not only in devices, but also in the study of fundamental physics. Here, Wang et al. demonstrate the CVD growth of superconducting NbSe2 on a variety of substrates, making these novel materials increasingly accessible.
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- 2016
14. High-quality monolayer superconductor NbSe2 grown by chemical vapour deposition.
- Author
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Hong Wang, Xiangwei Huang, Junhao Lin, Jian Cui, Yu Chen, Chao Zhu, Fucai Liu, Qingsheng Zeng, Jiadong Zhou, Peng Yu, Xuewen Wang, Haiyong He, Siu Hon Tsang, Weibo Gao, Kazu Suenaga, Fengcai Ma, Changli Yang, Li Lu, Ting Yu, and Edwin Hang Tong Teo
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CHEMICAL vapor deposition ,MONOMOLECULAR films ,SUPERCONDUCTORS ,TRANSMISSION electron microscopes ,SCANNING electron microscopes ,VAPORS ,ULTRAHIGH vacuum - Abstract
The discovery of monolayer superconductors bears consequences for both fundamental physics and device applications. Currently, the growth of superconducting monolayers can only occur under ultrahigh vacuum and on specific lattice-matched or dangling bond-free substrates, to minimize environment- and substrate-induced disorders/defects. Such severe growth requirements limit the exploration of novel two-dimensional superconductivity and related nanodevices. Here we demonstrate the experimental realization of superconductivity in a chemical vapour deposition grown monolayer material-NbSe
2 . Atomic-resolution scanning transmission electron microscope imaging reveals the atomic structure of the intrinsic point defects and grain boundaries in monolayer NbSe2 , and confirms the low defect concentration in our high-quality film, which is the key to two-dimensional superconductivity. By using monolayer chemical vapour deposited graphene as a protective capping layer, thickness-dependent superconducting properties are observed in as-grown NbSe2 with a transition temperature increasing from 1.0 K in monolayer to 4.56 K in 10-layer. [ABSTRACT FROM AUTHOR]- Published
- 2017
- Full Text
- View/download PDF
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