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Van der Waals engineering of ferroelectric heterostructures for long-retention memory
- Source :
- Nature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
- Publication Year :
- 2021
- Publisher :
- Nature Portfolio, 2021.
-
Abstract
- The memory retention for a ferroelectric field-effect transistor is limited by the depolarization effects and carrier charge trapping. Here, the authors fabricate a long-retention memory cell with a metal-ferroelectric-metal-insulator-semiconductor architecture built from all van der Waals single crystals.
- Subjects :
- Science
Subjects
Details
- Language :
- English
- ISSN :
- 20411723
- Volume :
- 12
- Issue :
- 1
- Database :
- Directory of Open Access Journals
- Journal :
- Nature Communications
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.9ad4d3622c3f4336850233ae14c3daa3
- Document Type :
- article
- Full Text :
- https://doi.org/10.1038/s41467-021-21320-2