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We demonstrate the use of individual semiconducting single-wall carbon nanotubes as versatile biosensors. Controlled attachment of the redox enzyme glucose oxidase (GOx) to the nanotube sidewall is achieved through a linking molecule and is found to induce a clear change of the conductance. The enzyme-coated tube is found to act as a pH sensor with large and reversible changes in conductance upon changes in pH. Upon addition of glucose, the substrate of GOx, a steplike response can be monitored in real time, indicating that our sensor is also capable of measuring enzymatic activity at the level of a single nanotube. This first demonstration of nanotube-based biosensors provides a new tool for enzymatic studies and opens the way to biomolecular diagnostics.

The electronic transport characteristics of self-assembled monolayers of phenylene-based p-conjugated molecules were measured in a three-terminal device geometry. The short (1 nm) molecules were connected between two gold electrodes with a nearby Al2O3/Al gate electrode. It was possible to fabricate working devices using three of the five molecules investigated. The other two types of molecules led to devices where the Au electrodes were shorted together. Current-voltage characteristics as a function of the gate voltage are presented for the other three molecules. For some devices with 1,3-benzenedithiol, a weak gate effect was observed but no gating effect was observed for devices fabricated with the other molecules. The results are in strong contrast with those reported by Schön et al.

This study reports the electrical transport characteristics of Si(1-x)Gex (x=0-0.3) nanowires. Nanowires with diameters of 50-100 nm were grown on Si substrates. The valence band spectra from the nanowires indicate that energy band gap modulation is readily achievable using the Ge content. The structural characterization showed that the native oxide of the Si(1-x)Gex nanowires was dominated by SiO2; however, the interfaces between the nanowire and the SiO2 layer consisted of a mixture of Si and Ge oxides. The electrical characterization of a nanowire field effect transistor showed p-type behavior in all Si(1-x)Gex compositions due to the Ge-O and Si-O-Ge bonds at the interface and, accordingly, the accumulation of holes in the level filled with electrons. The interfacial bonds also dominate the mobility and on- and off-current ratio. The large interfacial area of the nanowire, together with the trapped negative interface charge, creates an appearance of p-type characteristics in the Si(1-x)Gex alloy system. Surface or interface structural control, as well as compositional modulation, would be critical in realizing high-performance Si(1-x)Gex nanowire devices.