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Interface Charge Induced p-Type Characteristics of Aligned Si1−xGexNanowires.
- Source :
- Nano Letters; Oct2008, Vol. 8 Issue 11, p3656-3661, 6p
- Publication Year :
- 2008
Details
- Language :
- English
- ISSN :
- 15306984
- Volume :
- 8
- Issue :
- 11
- Database :
- Supplemental Index
- Journal :
- Nano Letters
- Publication Type :
- Academic Journal
- Accession number :
- 35228597
- Full Text :
- https://doi.org/10.1021/nl8016362