1. Effects of Y2O3insertion layer on anisotropic magnetoresistance of Ni81Fe19 films
- Author
-
Shuyun Wang, Yuan He, Huaxue Huang, Yang Sun, and Tiejun Gao
- Subjects
Diffraction ,Materials science ,Magnetoresistance ,Magnetometer ,Intercalation (chemistry) ,Analytical chemistry ,Statistical and Nonlinear Physics ,02 engineering and technology ,Substrate (electronics) ,Sputter deposition ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Magnetic hysteresis ,01 natural sciences ,law.invention ,law ,0103 physical sciences ,010306 general physics ,0210 nano-technology ,Layer (electronics) - Abstract
A series of Ta(4 nm)/Y2O[Formula: see text]/Ni[Formula: see text]Fe[Formula: see text](20 nm)/Y2O[Formula: see text]/Ta(3 nm) films were prepared on glass substrates by magnetron sputtering under appropriate conditions. AMR value, phase composition and magnetic hysteresis hoop of Ni[Formula: see text]Fe[Formula: see text] films were measured and analyzed by four-point probe technology, X-ray diffraction (XRD) and vibrating sample magnetometer (VSM), respectively. Influence of Y2O3which work as oxidation intercalation on AMR values of Ni[Formula: see text]Fe[Formula: see text] films was investigated. The experiment results show that, at the substrate temperature of 450[Formula: see text]C, the AMR value of the film with Y2O3layer thickness of 2.5 nm can reach 4.61%, increasing by 71.3% compares with the film without Y2O3layer.
- Published
- 2016
- Full Text
- View/download PDF