Effects of Y2O3insertion layer on anisotropic magnetoresistance of Ni81Fe19 films

A series of Ta(4 nm)/Y2O[Formula: see text]/Ni[Formula: see text]Fe[Formula: see text](20 nm)/Y2O[Formula: see text]/Ta(3 nm) films were prepared on glass substrates by magnetron sputtering under appropriate conditions. AMR value, phase composition and magnetic hysteresis hoop of Ni[Formula: see text]Fe[Formula: see text] films were measured and analyzed by four-point probe technology, X-ray diffraction (XRD) and vibrating sample magnetometer (VSM), respectively. Influence of Y2O3which work as oxidation intercalation on AMR values of Ni[Formula: see text]Fe[Formula: see text] films was investigated. The experiment results show that, at the substrate temperature of 450[Formula: see text]C, the AMR value of the film with Y2O3layer thickness of 2.5 nm can reach 4.61%, increasing by 71.3% compares with the film without Y2O3layer.