1. THE IMPORTANCE OF <font>Fe</font> SURFACE STATES FOR MAGNETIC TUNNEL JUNCTION BASED SPINTRONIC DEVICES
- Author
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Athanasios N. Chantis, Inna V. Sus, Evgeny Y. Tsymbal, and Kirill D. Belashchenko
- Subjects
Materials science ,Condensed matter physics ,Spin polarization ,Magnetoresistance ,Spintronics ,Statistical and Nonlinear Physics ,Spin polarized scanning tunneling microscopy ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Condensed Matter Physics ,Magnetization ,Tunnel magnetoresistance ,Tunnel effect ,Condensed Matter::Superconductivity ,Condensed Matter::Strongly Correlated Electrons ,Surface states - Abstract
In this article we give a review of our recent theoretical studies of the influence of Fe (001) surface (interface) states on spin-polarized electron transport across magnetic tunnel junctions with Fe electrodes. We show that minority-spin surface (interface) states are responsible for at least two effects which are important for spin electronics. First, they can produce a sizable tunneling anisotropic magnetoresistance in magnetic tunnel junctions with a single Fe electrode. The effect is driven by a Rashba shift of the resonant surface band when the magnetization changes direction. This can introduce a new class of spintronic devices, namely, tunneling magnetoresistance junctions with a single ferromagnetic electrode. Second, in Fe/GaAs (001) magnetic tunnel junctions minority-spin interface states produce a strong dependence of the tunneling current spin polarization on applied electrical bias. A dramatic sign reversal within a voltage range of just a few tenths of an eV is predicted. This explains the observed sign reversal of spin polarization in recent experiments of electrical spin injection in Fe/GaAs (001) and related reversal of tunneling magnetoresistance through vertical Fe/GaAs/Fe trilayers.
- Published
- 2008