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This article proposes a high-performance CMOS voltage-controlled oscillator (VCO) implemented with composite right-/left-handed nonmobius-connected LC-rings to provide dual-band differential outputs.The VCO consists of two cross-coupled sub-VCOs sharing series-LC resonators. nMOSFET switches are used to control high- and low-band outputs. The proposed VCO has been implemented with the TSMC 0.18 μm SiGe BiCMOS technology. The die area of the VCO is 1.16 × 1.12 mm2. With the switch on, the odd-mode VCO operates at the high-frequency 6 GHz band, and when the switch is off, the even-mode VCO operates at the low-frequency 4 GHz band. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:468-471, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27375 [ABSTRACT FROM AUTHOR]

A low power wide locking range divide-by-4 injection-locked frequency divider (ILFD) is proposed in the letter and was implemented in the TSMC 0.18 μm SiGe BiCMOS process. The divide-by-4 ILFD uses a cross-coupled voltage-controlled oscillator with an active inductor and a three-transistor composite consisted of two nMOSFETs and one pMOSFET to serve as an injection device with the function of linear and nonlinear mixers. At the supply voltage of 1.5 V and at the incident power of 0 dBm, the operation range of the divide-by-4 is 2.3 GHz, from the incident frequency 14.5 to 16.8 GHz, the percentage is 14.7%. The locking range of the divide-by-4 is 1.7 GHz, from the incident frequency from 14.6 to 16.3 GHz, the percentage is 11%. The core power consumption is 1.5 mW. The die area is 0.465 × 0.317 mm2. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2825-2828, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27204 [ABSTRACT FROM AUTHOR]

This letter proposes a BiCMOS voltage-controlled oscillator (VCO), which was implemented in the standard TSMC 0.18 μm SiGe 3P6M BiCMOS process. The VCO consists of an nMOSFET cross-coupled oscillator stacked in series with source degenerated HBT diodes. SiGe HBT has an inherently low flicker noise compared to CMOS devices. At the supply voltage of 1.5 V, the output phase noise of the VCO is −122.01 dBc/Hz at 1 MHz offset frequency from the carrier frequency of 5.6 GHz, and the figure of merit is −190.43 dBc/Hz. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:605-608, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26619 [ABSTRACT FROM AUTHOR]

This article presents a new quadrature voltage-controlled oscillator (QVCO). The LC-tank QVCO consists of two first-harmonic injection-locked oscillators (ILOs). The outputs of one ILO are injected to the gates of the MOS transistors on the other ILO and vice versa so as to force the two local oscillator (LOs) operate in quadrature. The injection metal-oxide-semiconductor field-effect transistors (MOSFETs) are also used as frequency tuning varactors. The QVCO has been implemented with the Taiwan Semiconductor Manufacture Company (TSMC) 0.18 μm complementary metal-oxide-semiconductor (CMOS) technology and the die area is 0.646 mm × 0.841 mm. At the supply voltage of 1.3 V, the total power consumption is 9.58 mW. The free-running frequency is tunable from 5.44 to 5.95 GHz as the tuning voltage is varied from 0.2 to 2.0 V. The measured phase noise at 1 MHz offset is −121.52 dBc/Hz at the oscillation frequency of 5.91 GHz and the figure of merit (FOM) of the proposed QVCO is about −187.14 dBc/Hz. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:2631-2634, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26363 [ABSTRACT FROM AUTHOR]

This article presents a differential cross-coupled complementary Colpitts CMOS voltage-controlled oscillator (VCO).The low phase noise CMOS VCO has been implemented with the TSMC 0.35-μm 2P4M CMOS technology and adopts a pair of cross-coupled PMOS transistors to achieve faster start-up oscillation. The VCO operates from 6.16 to 6.5 GHz with 5.3% tuning range. The measured phase noise at 1 MHz offset is −121.12 dBc/Hz at 6.417 GHz. The power consumption of the VCO core is 6.16 mW. The figure of merit is −189.37 dBc/Hz. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26192 [ABSTRACT FROM AUTHOR]

This letter proposes a dual-band divide-by-2 transformer-coupled quadrature injection-locked frequency divider (QILFD).The QILFD is composed of a transformer-coupled quadrature voltage controlled oscillator and two injection MOSFETs. The CMOS QILFD has been implemented with the Taiwan Semiconductor Manufacture Company (TSMC) 0.18 μm CMOS technology, and the core power consumption is 3.997 mW at the supply voltage of 0.7 V. The tank impedance of the QILFD shows a dual resonance behavior, which leads to a dual-band locking range at a fixed bias condition. At the injection input power of 3 dBm, the low-band and high-band divide-by-2 locking ranges are from 6.90 to 8.56 GHz and 9.52 to 12.10 GHz, respectively. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26074 [ABSTRACT FROM AUTHOR]

This letter proposes a CMOS injection-locked frequency divider (ILFD) fabricated in a 0.35-μm CMOS process.The ILFD circuit is realized with a cross-coupled CMOS LC-tank oscillator, and the external injection is carried out through the gate of a waffle MOSFET. The self-oscillating ILFD is injection-locked by second-/fourth-harmonic input to obtain the division order of two/four. Measurement results show that at the supply voltage of 0.9 V and at the incident power of 0 dBm, the locking range is from the incident frequency 4.25 to 6.35 GHz in the divide-by-2 mode. The locking range is from the incident frequency 10.75 to 11.25 GHz in the divide-by-4 mode. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26064 [ABSTRACT FROM AUTHOR]

A new fully integrated CMOS quadrature voltage-controlled oscillator (QVCO) is presented.The QVCO is composed of two cross-coupled nMOSFETs in shunt with a parallel-tuned LC resonator and was implemented in 0.18 μm CMOS technology. The source of nMOSFET is in series with a degenerated pMOSFET modulated by the VCO output signal. The negative resistance cell in the QVCO is a transconductance-enhanced Colpitts-like cell used to improve the start-up oscillation. The QVCO is tunable from 7.04 to 8.08 GHz. Although the tuning voltage varies from 0 to 2 V. The phase noise of the QVCO operating at 7.09 GHz is −120.5 dBc/Hz at 1 MHz offset, while the QVCO draws 4 mA and uses 4 mW consumption. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:1453-1455, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26820 [ABSTRACT FROM AUTHOR]

A new fully integrated, CMOS Clapp quadrature voltage-controlled oscillator (QVCO) is presented.The QVCO is composed of two differential n-core Clapp VCOs coupled by four pMOSFETs and was implemented in the 0.18-μm CMOS technology with 0.9-V supply voltage. The die area is 0.574 × 0.866 mm. At the supply voltage of 0.9 V, the total power consumption is 12.2 mW. The free-running frequency of the QVCO is tunable from 7.89 to 9.3 GHz as the tuning voltage is varied from 0 to 2 V. The measured phase noise at 1-MHz frequency offset is −118.65 dBc/Hz at the oscillation frequency of 7.89 GHz, and the figure of merit of the proposed QVCO is about −185.71 dBc/Hz. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26109 [ABSTRACT FROM AUTHOR]