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A low power wide locking range divide-by-4 injection-locked frequency divider (ILFD) is proposed in the letter and was implemented in the TSMC 0.18 μm SiGe BiCMOS process. The divide-by-4 ILFD uses a cross-coupled voltage-controlled oscillator with an active inductor and a three-transistor composite consisted of two nMOSFETs and one pMOSFET to serve as an injection device with the function of linear and nonlinear mixers. At the supply voltage of 1.5 V and at the incident power of 0 dBm, the operation range of the divide-by-4 is 2.3 GHz, from the incident frequency 14.5 to 16.8 GHz, the percentage is 14.7%. The locking range of the divide-by-4 is 1.7 GHz, from the incident frequency from 14.6 to 16.3 GHz, the percentage is 11%. The core power consumption is 1.5 mW. The die area is 0.465 × 0.317 mm2. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2825-2828, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27204 [ABSTRACT FROM AUTHOR]

This letter develops a phase noise formula for injection-locked frequency dividers (ILFDs) implemented with dual-resonance LC tank, which consists of a series LC resonator and a parallel LC resonator. In parallel-tuned single-resonance ILFD, the output phase noise is set by the noise of the injection signal at low frequency offset from the carrier, while it can be dominated by the divider noise at large frequency offset. The developed theory shows that the phase noise equations of a series-tuned single-resonance ILFD and dual-resonance ILFDs has a common phase noise equation as the one used for a single-resonance parallel-tuned ILFD. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2491-2494, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27105 [ABSTRACT FROM AUTHOR]

This letter proposes a wide locking range and operation range divide-by-4 injection-locked frequency divider (ILFD) in the TSMC 0.18-μm 1P6M RF-CMOS process.The divide-by-4 ILFD uses an active inductor to increase the tuning range and a transistor composite to serve an injection device with two linear mixers to enhance the locking range of ILFD. At the supply voltage of 1.7 V, and at the incident power of 0 dBm the operation range of the divide-by-4 is about 5.8 GHz, from the incident frequency 3.6 to 9.4 GHz, the percentage is 89.2%. The locking range of the divide-by-4 is 1.8 GHz, from the incident frequency 6.8 to 8.6 GHz, the percentage is about 23.4%. The core power consumption is 7.6 mW. The die area is 0.503 × 0.36 mm2. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:1359-1362, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26854 [ABSTRACT FROM AUTHOR]

A high operation frequency multimodulus injection locked frequency divider (ILFD) has been proposed and it is based on a cross-coupled voltage-controlled oscillator with the parallel-injection heterojunction bipolar transistors (HBTs), and was fabricated in the 0.35 μm silicon-germanium (SiGe) 3P3M BiCMOS technology. The die area is 0.82 × 0.748 mm2. The metal-oxide-semicondcutor (MOS) varactor is used to tune the frequency range and operation range. The ILFD has wide divide-by-3 locking range due to the parallel injection HBTs with an inductive boosted source voltage. When the supply voltage VCC is 1.2 V and the tuning voltage of the free-running ILFD is tuned from 0 to 1.2 V, the divider's free-running oscillation frequency is tunable from 6.21 to 7.379 GHz, and at the incident power of 0 dBm the divide-by-3 operation range is 2.7 GHz, continuously from the incident frequency 19.2 to 21.9 GHz. The divide-by-3 locking range is 0.8 GHz, from the incident frequency 20.9 to 21.7 GHz. The divide-by-2 locking range is 0.8 GHz, from the incident frequency 15.2 to 16.0 GHz. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:379-383, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26593 [ABSTRACT FROM AUTHOR]

This letter proposes a dual-band divide-by-2 transformer-coupled quadrature injection-locked frequency divider (QILFD).The QILFD is composed of a transformer-coupled quadrature voltage controlled oscillator and two injection MOSFETs. The CMOS QILFD has been implemented with the Taiwan Semiconductor Manufacture Company (TSMC) 0.18 μm CMOS technology, and the core power consumption is 3.997 mW at the supply voltage of 0.7 V. The tank impedance of the QILFD shows a dual resonance behavior, which leads to a dual-band locking range at a fixed bias condition. At the injection input power of 3 dBm, the low-band and high-band divide-by-2 locking ranges are from 6.90 to 8.56 GHz and 9.52 to 12.10 GHz, respectively. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26074 [ABSTRACT FROM AUTHOR]

This letter proposes a CMOS injection-locked frequency divider (ILFD) fabricated in a 0.35-μm CMOS process.The ILFD circuit is realized with a cross-coupled CMOS LC-tank oscillator, and the external injection is carried out through the gate of a waffle MOSFET. The self-oscillating ILFD is injection-locked by second-/fourth-harmonic input to obtain the division order of two/four. Measurement results show that at the supply voltage of 0.9 V and at the incident power of 0 dBm, the locking range is from the incident frequency 4.25 to 6.35 GHz in the divide-by-2 mode. The locking range is from the incident frequency 10.75 to 11.25 GHz in the divide-by-4 mode. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26064 [ABSTRACT FROM AUTHOR]

A fourth order resonator has been implemented to design an injection locked frequency divider (ILFD) implemented in a 0.35-μm SiGe 3P3M BiCMOS process. The ILFD is realized with a cross-coupled HBT LC-tank oscillator with switched varactor bias for frequency band selection. The LC tank is a 4th order resonator and it can operate with two tunable frequency bands. Measurement results show that at the supply voltage of 1.25 V, the free-running frequency can be from 3.22 (6.76) to 3.41 (7.53) GHz for the low-(high-) frequency band. The divide-by-2 operational locking range can be from 6.3 (12.8) to 6.95 (15.3) GHz for the low-(high-) frequency band. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:2762-2765, 2010; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25586 [ABSTRACT FROM AUTHOR]

A new wide locking range active-inductor divide-by-3 injection-locked frequency divider (ILFD) using a standard 0.18-μm CMOS process is presented.The push-push ILFD circuit is realized with a push-push cross-coupled n-core MOS LC-tank oscillator. The core power consumption of the ILFD core is 7.41 mW. The divider's free-running frequency is tunable from 1.39 to 3.18 GHz by tuning the varactor's control bias, and at the incident power of 0 dBm the maximum locking range is 2.9 GHz (43.6%), from the incident frequency 5.2 to 8.1 GHz. The operation range is 5.9 GHz (80.27%), from 4.4 to 10.3 GHz. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:2771-2773, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26426 [ABSTRACT FROM AUTHOR]