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This article proposes a dual-resonance CMOS LC-tank injection-locked frequency doubler (ILFD) fabricated in the 0.18 μm CMOS process and describes the circuit design, operation principle, and measurement results of the ILFD. The ILFD circuit is composed of a dual-resonance first-harmonic injection-locked oscillator with dual-injection ports, a wide-band frequency doubler, and a transformer balun. At the supply voltage of 0.7 V, the dc power consumption is 5.39 mW. At the incident power of 0 dBm, the ILFD has high/low operation range from the incident frequency 3.9/1.7 to 6.1/2 GHz to provide a dual-band signal source with the frequency 7.8/3.4-12.2/4 GHz. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:193-196, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26501 [ABSTRACT FROM AUTHOR]

A diode-ring coupling technique has been used to design quadrature voltage-controlled oscillators (QVCOs), which consist of two n-core VCOs.The proposed CMOS QVCOs have been implemented with the TSMC 0.18 μm CMOS technology. A single-band and a dual-band QVCOs have been implemented to support the feasibility of the coupling technique. The die area of the single-band QVCO is 0.506 × 0.905 mm. At the supply voltage of 0.54 V, the total power consumption is 1.78 mW. The free-running frequency of the QVCO is tunable from 4.295 to 5.185 GHz as the tuning voltage is varied from 0.0 to 1.1 V. The measured phase noise at 1 MHz frequency offset is −114 dBc/Hz at the oscillation frequency 4.587 GHz, and the figure of merit of the proposed QVCO is −184.73 dBc/Hz. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:551-553, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25774 [ABSTRACT FROM AUTHOR]

A wide-band ÷3 injection locked frequency divider (ILFD) has been proposed, and it is based on a single-stage voltage-controlled oscillator with active-inductor and HBT diodes, and was fabricated in the 0.35 μm silicon-germanium 3P3M BiCMOS technology. The ILFD has wide operation range and was performed by injecting a differential signal to the bases of the injection HBTs. At the supply voltage V = 1.8 V, the oscillation frequency of the ILFD with two tuning voltages is tunable from 4.17 to 2.12 GHz, and at the incident power of 0 dBm, the ÷3 operation range is 5.93 GHz, from the incident frequency 6.3 to 12.23 GHz. The die area is 0.59 × 0.63 mm. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:609-611, 2011; View this article at wileyonlinelibrary.com. DOI 10.1002/mop.25771 [ABSTRACT FROM AUTHOR]