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Your search keyword '"Simoen, E."' showing total 31 results
Start Over Author "Simoen, E." Journal materials science in semiconductor processing
31 results on '"Simoen, E."'

8. Radiation damage of Ge-on-Si devices

Author

Ohyama, H., Sakamoto, K., Sukizaki, H., Takakura, K., Hayama, K., Motoki, M., Matsuo, K., Nakamura, H., Sawada, M., Midorikawa, M., Kuboyama, S., De Jaeger, B., Simoen, E., and Claeys, C.

Published
2008
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25. Stress analysis of Si1−xGex embedded source/drain junctions

Author

Bargallo Gonzalez, M., primary, Simoen, E., additional, Naka, N., additional, Okuno, Y., additional, Eneman, G., additional, Hikavyy, A., additional, Verheyen, P., additional, Loo, R., additional, Claeys, C., additional, Machkaoutsan, V., additional, Tomasini, P., additional, Thomas, S.G., additional, Lu, J.P., additional, and Wise, R., additional

Published
2008
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29. Stress analysis of Si1− x Ge x embedded source/drain junctions

Author

Bargallo Gonzalez, M., Simoen, E., Naka, N., Okuno, Y., Eneman, G., Hikavyy, A., Verheyen, P., Loo, R., Claeys, C., Machkaoutsan, V., Tomasini, P., Thomas, S.G., Lu, J.P., and Wise, R.

Subjects
*THERMOELASTIC stress analysis, *RAMAN spectroscopy, *SILICON, *GERMANIUM, *SIMULATION methods & models, *METAL oxide semiconductor field-effect transistors
Abstract

Abstract: The purpose of this paper is to evaluate the impact of the geometry of embedded Si1− x Ge x source/drain junctions on the stress field. Stress simulations were performed using TSUPREM4 2D software to further investigate the elastic strain relaxation as a function of Si1− x Ge x alloy active size, in the regime where no plastic relaxation is present. Moreover, the role of the epilayer thickness and the Ge content on the stress levels is also discussed. The work is complemented with experimental Raman spectroscopy. [Copyright &y& Elsevier]

Published
2008
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30. 1/f noise performance of MOSFETs with HfO2 and metal gate on Ge-on-insulator substrates

Author

Srinivasan, P., Simoen, E., De Jaeger, B., Claeys, C., and Misra, D.

Subjects
*GERMANIUM compounds, *NOISE measurement, *SEMICONDUCTOR design, *MATERIALS science
Abstract

Abstract: The low frequency (1/f) noise performance of n- and p-MOSFETs with HfO2 and TiN–TaN metal gate on GeOI substrates has been investigated. The LF noise spectra are of the 1/f γ type, with γ>1. The current noise spectral density is typically one decade higher than for silicon counterparts. The behavior of the noise characteristics points to carrier trapping as the prevailing 1/f noise mechanism. Using a tunneling coefficient α=6.5×107 cm−1 for the Ge/HfO2 system, the extracted volume and surface trap densities are in the range of 1×1020/cm3 eV and a few 1012/cm2 , respectively. This is of the same order as the interface trap densities, obtained from charge pumping. It is believed that the Ge/interfacial layer (IL) quality could be responsible for the significantly higher trap densities and noise, compared with Si/HfO2/ TiN–TaN MOSFETs. [Copyright &y& Elsevier]

Published
2006
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31. Interface characterization of Si-passivated HfO2 germanium capacitors using DLTS measurements

Author

Martens, K., Simoen, E., De Jaeger, B., Meuris, M., Groeseneken, G., and Maes, H.

Subjects
*GERMANIUM compounds, *DIELECTRIC amplifiers, *SEMICONDUCTOR design, *MATERIALS science
Abstract

Abstract: Deep level transient spectroscopy (DLTS) has been applied on high-κ Ge capacitors for the first time to investigate interface states in Si-passivated HfO2 germanium MOS-capacitors. DLTS yielded information about the energy location and density of defects in the Ge bandgap. Evidence was found for an additional interface state peak near midgap for the considered Ge MOS-capacitors. [Copyright &y& Elsevier]

Published
2006
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