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Abstract: The temperature dependent diffusion and epitaxial behavior of oxidized Au/Ni/p-GaN ohmic contact were studied with Rutherford backscattering spectroscopy/channeling (RBS/C) and synchrotron X-ray diffraction (XRD). It is found that the Au diffuses to the surface of p-GaN to form an epitaxial structure on p-GaN after annealing at 450°C. At the same time, the O diffuses to the metal–semiconductor interface and forms NiO. Both of them are suggested to be responsible for the sharp decrease in the specific contact resistance (ρ c) at 450°C. At 500°C, the epitaxial structure of Au develops further and the O also diffuses deeper into the interface. As a result, the ρ c reaches the lowest value at this temperature. However, when annealing temperature reaches 600°C, part or all of the interfacial NiO is detached from the p-GaN and diffuses out, which cause the ρ c to increase greatly. [Copyright &y& Elsevier]

The thermal annealing effects on Ti/Al/Ni/Au Ohmic contact to n-GaN are investigated by current–voltage (I–V) characteristics and transmission line method (TLM) measurements. The cladding layer of Ni/Au on Ti/Al plays two roles: preventing inter-diffusion of Ti, Al, Au and anti-oxidation of the contacting layer. The specific contact resistance (ρc) of Ti/Al/Ni/Au to n-GaN increases slightly at first with the increasing annealing temperature (Ta). When Ta increases above 500 °C, ρc decreases monotonously in the range of 400–900 °C. However, the morphology of the contact degrades gradually when Ta increases above 600 °C. The minimum of ρc is obtained as 9.65×10-7 Ω cm2 by two-step annealing method in this work. Finally, the roles of two-step annealing method in the formation mechanism of the Ohmic contact to n-GaN are also discussed. [Copyright &y& Elsevier]