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Your search keyword '"Sigui Hu"' showing total 2 results
Start Over Author "Sigui Hu" Journal materials & design
2 results on '"Sigui Hu"'

1. Self-powered MoSe2/ZnO heterojunction photodetectors with current rectification effect and broadband detection

Author

Zhichen Wan, Haoran Mu, Zhuo Dong, Sigui Hu, Wenzhi Yu, Shenghuang Lin, and Sudha Mokkapati

Subjects
Van der Waals, Molybdenum disulphide, Zinc oxide, Self-powered photodetector, Materials of engineering and construction. Mechanics of materials, TA401-492
Abstract

Recently, n-n junction with large bandgap offset has been reported to be able to realize rectifier function and improve photoresponse in optoelectronic applications. In this work, we demonstrate a simple way to engineer photodetector based on a MoSe2/ZnO heterojunction. ZnO thin film deposited by DC magnetron sputtering and mechanically exfoliated MoSe2 was coupled to form vertical stacking heterostructure. An atomically sharp n-n junction with type-II band alignment and current rectification behaviour is realised. The MoSe2/ZnO based photodetector exhibits a fast photoresponse speed of 40 μs, and a peak responsivity of 2.7 A/W. It is also demonstrated that the MoSe2/ZnO photodiode can operate under self-powered mode over a broad spectrum.

Published
2021
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2. Self-powered MoSe2/ZnO heterojunction photodetectors with current rectification effect and broadband detection

Author

Wenzhi Yu, Sigui Hu, Zhichen Wan, Haoran Mu, Shenghuang Lin, Sudha Mokkapati, and Zhuo Dong

Subjects
Materials science, business.industry, Band gap, Mechanical Engineering, Self-powered photodetector, Photodetector, Heterojunction, Sputter deposition, Photodiode, law.invention, Responsivity, Rectification, Mechanics of Materials, law, Zinc oxide, TA401-492, Optoelectronics, Van der Waals, General Materials Science, Thin film, business, Materials of engineering and construction. Mechanics of materials, Molybdenum disulphide
Abstract

Recently, n-n junction with large bandgap offset has been reported to be able to realize rectifier function and improve photoresponse in optoelectronic applications. In this work, we demonstrate a simple way to engineer photodetector based on a MoSe2/ZnO heterojunction. ZnO thin film deposited by DC magnetron sputtering and mechanically exfoliated MoSe2 was coupled to form vertical stacking heterostructure. An atomically sharp n-n junction with type-II band alignment and current rectification behaviour is realised. The MoSe2/ZnO based photodetector exhibits a fast photoresponse speed of 40 μs, and a peak responsivity of 2.7 A/W. It is also demonstrated that the MoSe2/ZnO photodiode can operate under self-powered mode over a broad spectrum.

Published
2021

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