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Self-powered MoSe2/ZnO heterojunction photodetectors with current rectification effect and broadband detection
- Source :
- Materials & Design, Vol 212, Iss, Pp 110185-(2021)
- Publication Year :
- 2021
- Publisher :
- Elsevier BV, 2021.
-
Abstract
- Recently, n-n junction with large bandgap offset has been reported to be able to realize rectifier function and improve photoresponse in optoelectronic applications. In this work, we demonstrate a simple way to engineer photodetector based on a MoSe2/ZnO heterojunction. ZnO thin film deposited by DC magnetron sputtering and mechanically exfoliated MoSe2 was coupled to form vertical stacking heterostructure. An atomically sharp n-n junction with type-II band alignment and current rectification behaviour is realised. The MoSe2/ZnO based photodetector exhibits a fast photoresponse speed of 40 μs, and a peak responsivity of 2.7 A/W. It is also demonstrated that the MoSe2/ZnO photodiode can operate under self-powered mode over a broad spectrum.
- Subjects :
- Materials science
business.industry
Band gap
Mechanical Engineering
Self-powered photodetector
Photodetector
Heterojunction
Sputter deposition
Photodiode
law.invention
Responsivity
Rectification
Mechanics of Materials
law
Zinc oxide
TA401-492
Optoelectronics
Van der Waals
General Materials Science
Thin film
business
Materials of engineering and construction. Mechanics of materials
Molybdenum disulphide
Subjects
Details
- ISSN :
- 02641275
- Volume :
- 212
- Database :
- OpenAIRE
- Journal :
- Materials & Design
- Accession number :
- edsair.doi.dedup.....9f54033589bf20c3a4c55d9ff161eaa6