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Rapid nitridation of Ti film evaporated on a Si and SiO2/Si wafer using a large area electron beam has been described. A predominant enhanced processing of an e‐beam should be considered. The film structure of the sample processed by an e‐beam has been characterized by Rutherford backscattering (RBS) and secondary ion mass spectrometry (SIMS) analysis, after rapid processing. Identification of the chemical composition of the film was performed with x‐ray diffraction. The minimum sheet resistance of TiN was about 0.6 and 14.2 Ω/⧠ for Si and SiO2/Si substrate, respectively. A ratio of 0.96%±5% (N/Ti), the stoichiometric composition of the sample characterized by RBS, has been obtained.

For practical titanium silicide device application the oxygen behavior in the solid phase interaction is important to study. The Ti/Si and Ti/SiO2 interaction by the NH3 plasma assisted thermal annealing and oxidation of Ti/SiO2 and TiSi2/Si in a wet oxygen ambient were investigated by Auger electron analysis. The characteristic Auger spectral line shapes of Ti, O, and Si and their changes in compounds were measured. The experiment clearly demonstrated the oxygen snowplow effect during TiSi2 and TiN growth, and a stable SiO2 can be grown on TiSi2/Si directly or through a layer of TiO2.