Formation of TiN on Si and SiO2 by rapid processing using a large area electron beam

Rapid nitridation of Ti film evaporated on a Si and SiO2/Si wafer using a large area electron beam has been described. A predominant enhanced processing of an e‐beam should be considered. The film structure of the sample processed by an e‐beam has been characterized by Rutherford backscattering (RBS) and secondary ion mass spectrometry (SIMS) analysis, after rapid processing. Identification of the chemical composition of the film was performed with x‐ray diffraction. The minimum sheet resistance of TiN was about 0.6 and 14.2 Ω/⧠ for Si and SiO2/Si substrate, respectively. A ratio of 0.96%±5% (N/Ti), the stoichiometric composition of the sample characterized by RBS, has been obtained.