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The external quantum efficiency (EQE) in electrically injected AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) is severely limited by their poor current injection efficiency (CIE). We report improvement in the CIE via controlling the relaxation of strains in the p-AlGaN hole injection layer (HIL) and the electron blocking layer (EBL). Simulation results show that an unrelaxed strain in the HIL associated with a relaxed strain in EBL can significantly enhance CIE. Deeper analysis indicates that high hole concentrations can be generated at HIL/EBL interface by strain-induced piezoelectric fields, which can then provide abundant numbers of holes for injection into quantum wells. Two sub-280 nm DUV-LEDs were fabricated with specific designs for different strain relaxations in the p-AlGaN HIL by changing the HIL thickness from 200 to 20 nm. The strain difference was identified using Raman spectroscopy. Electroluminescence measurements demonstrated much higher EQE in the strained-HIL DUV-LEDs. By separating the EQE contributions of three efficiencies, i.e. the CIE, the radiative recombination efficiency and the light extraction efficiency, we found that the EQE enhancement could mainly be attributed to the improved CIE, which agreed well with the simulation results.

We thoroughly explored the physical origin of the efficiency decrease with increasing injection current and current crowding effect in 280 nm AlGaN-based flip-chip deep-ultraviolet (DUV) light-emitting diodes (LEDs). The current spreading length was experimentally determined to be much smaller in DUV LEDs than that in conventional InGaN-based visible LEDs. The severe self-heating caused by the low power conversion efficiency of DUV LEDs should be mainly responsible for the considerable decrease of efficiency when current crowding is present. The wall-plug efficiency of the DUV LEDs was markedly enhanced by using a well-designed p-electrode pattern to improve the current distribution.

The current crowding is an especially severe issue in AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) because of the low conductivity of the n-AlGaN cladding layer that has a high Al fraction. We theoretically investigated the improvement in internal quantum efficiency and total resistances in DUV-LEDs with an emission wavelength of 265 nm by a well-designed p-electrode geometry to produce uniform current spreading. As a result, the wall-plug efficiency was enhanced by a factor of 60% at an injection current of 350 mA in the designed uniform-current-spreading p-electrode LED when compared with an LED with a conventional cross-bar p-electrode pattern.